200 MeV silver ion irradiation induced structural modification in YBa2Cu3O7−y thin films at 89 K: An in situ x-ray diffraction study

2009 ◽  
Vol 106 (5) ◽  
pp. 053912 ◽  
Author(s):  
R. Biswal ◽  
J. John ◽  
P. Mallick ◽  
B. N. Dash ◽  
P. K. Kulriya ◽  
...  
2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.


2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro

2013 ◽  
Vol 103 (24) ◽  
pp. 242904 ◽  
Author(s):  
J. Sinsheimer ◽  
S. J. Callori ◽  
B. Ziegler ◽  
B. Bein ◽  
P. V. Chinta ◽  
...  

2012 ◽  
Vol 83 (1) ◽  
pp. 013902 ◽  
Author(s):  
C. Grygiel ◽  
H. Lebius ◽  
S. Bouffard ◽  
A. Quentin ◽  
J. M. Ramillon ◽  
...  

2008 ◽  
Vol 1072 ◽  
Author(s):  
Riccardo De Bastiani ◽  
Alberto Maria Piro ◽  
Maria Grazia Grimaldi ◽  
Emanuele Rimini ◽  
Giuseppe Baratta ◽  
...  

ABSTRACTThe crystallization kinetics of as-deposited amorphous Ge2Sb2Te5 thin films has been measured by in situ time resolved reflectivity. X-ray diffraction and Raman scattering analyses of partially transformed samples allowed to correlate the evolution of the transition to the structural modification in the long and short range configuration. The experimental results evidenced that during the early stages of crystallization there is a reduction of Ge-Te tetrahedral bonds, characteristics of the Ge coordination in amorphous Ge2Sb2Te5 films.


2012 ◽  
Vol 407 (17) ◽  
pp. 3437-3440 ◽  
Author(s):  
H. Wang ◽  
G.A. Sun ◽  
B. Chen ◽  
Y.Q. Fu ◽  
X.L. Wang ◽  
...  

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