100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer

2009 ◽  
Vol 95 (7) ◽  
pp. 072506 ◽  
Author(s):  
C. Papusoi ◽  
B. Delaët ◽  
B. Rodmacq ◽  
D. Houssameddine ◽  
J.-P. Michel ◽  
...  
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI
Keyword(s):  
Error Rate ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Underlying Mechanism ◽  
Theoretical Description ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

Precessional reversal in orthogonal spin transfer magnetic random access memory devices

2012 ◽  
Vol 101 (3) ◽  
pp. 032403 ◽  
Author(s):  
H. Liu ◽  
D. Bedau ◽  
D. Backes ◽  
J. A. Katine ◽  
A. D. Kent
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory
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