Analysis of 1.2μm InGaAs∕GaAs quantum dot laser for high power applications

2009 ◽  
Vol 106 (7) ◽  
pp. 073102 ◽  
Author(s):  
Q. Jiang ◽  
Z. Y. Zhang ◽  
D. T. D. Childs ◽  
R. A. Hogg
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Broad Area ◽  
Time Resolved ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

2001 ◽  
Vol 79 (18) ◽  
pp. 2868-2870 ◽  
Author(s):  
Hui-Yun Liu ◽  
Bo Xu ◽  
Yong-Qiang Wei ◽  
Ding Ding ◽  
Jia-Jun Qian ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Laser ◽  
Long Lifetime ◽  
Gaas Quantum Dot

A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser

2010 ◽  
Vol 27 (3) ◽  
pp. 034209 ◽  
Author(s):  
Ji Hai-Ming ◽  
Yang Tao ◽  
Cao Yu-Lian ◽  
Xu Peng-Fei ◽  
Gu Yong-Xian ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

2001 ◽  
Vol 78 (9) ◽  
pp. 1207-1209 ◽  
Author(s):  
R. L. Sellin ◽  
Ch. Ribbat ◽  
M. Grundmann ◽  
N. N. Ledentsov ◽  
D. Bimberg
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot
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