Generation of above 10[sup 10] Temporal Contrast, above 10[sup 20] W∕cm[sup 2] Peak Intensity Pulses at a 10 Hz Repetition Rate using an OPCPA Preamplifier in a Double CPA, Ti:sapphire Laser System

2009 ◽  
Author(s):  
Hiromitsu Kiriyama ◽  
Michiaki Mori ◽  
Yoshiki Nakai ◽  
Takuya Shimomura ◽  
Manabu Tanoue ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Laser System ◽  
Temporal Contrast ◽  
Ti:Sapphire Laser ◽  
Peak Intensity

All-solid-state high-peak-power Ti:sapphire laser system above 5-kHz repetition rate

2000 ◽  
Vol 70 (S1) ◽  
pp. S171-S179 ◽  
Author(s):  
Y. Nabekawa ◽  
T. Togashi ◽  
T. Sekikawa ◽  
S. Watanabe ◽  
S. Konno ◽  
...  
Keyword(s):  
Solid State ◽  
Repetition Rate ◽  
Peak Power ◽  
Laser System ◽  
High Peak ◽  
High Peak Power ◽  
Ti:Sapphire Laser

100-TW sub-20-fs Ti:sapphire laser system operating at a 10-Hz repetition rate

1998 ◽  
Vol 23 (18) ◽  
pp. 1468 ◽  
Author(s):  
K. Yamakawa ◽  
M. Aoyama ◽  
S. Matsuoka ◽  
T. Kase ◽  
Y. Akahane ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Laser System ◽  
Ti:Sapphire Laser ◽  
System Operating

Low repetition rate, narrow-linewidth, all-fiber 1064 nm laser system

2021 ◽  
pp. 103930
Author(s):  
Yaoyao Qi ◽  
Yu Zhang ◽  
Song Yang ◽  
Xiaowei Huo ◽  
Zhenxu Bai ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Laser System ◽  
Narrow Linewidth

scholarly journals Multi-terawatt laser system generating 12-fs pulses at 100 Hz repetition rate

2010 ◽  
Vol 101 (3) ◽  
pp. 523-534 ◽  
Author(s):  
Y. Nabekawa ◽  
A. Amani Eilanlou ◽  
Y. Furukawa ◽  
K. L. Ishikawa ◽  
H. Takahashi ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Laser System ◽  
Terawatt Laser

scholarly journals Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG

2021 ◽  
Vol 255 ◽  
pp. 10003
Author(s):  
Kore Hasse ◽  
Detlef Kip ◽  
Christian Kränkel
Keyword(s):  
Aspect Ratio ◽  
Repetition Rate ◽  
Laser System ◽  
Selective Etching ◽  
Etching Process ◽  
Acid Mixture ◽  
Laser Structuring ◽  
Order Of Magnitude ◽  
Fs Laser

We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.

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