Electrochemical growth and resistive switching of flat-surfaced and (111)-oriented Cu2O films

2009 ◽  
Vol 95 (9) ◽  
pp. 092108 ◽  
Author(s):  
Sung-Oong Kang ◽  
Sahwan Hong ◽  
Jinsik Choi ◽  
Jin-Soo Kim ◽  
Inrok Hwang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrochemical Growth ◽  
Cu2o Films

Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

Nanoscale ◽  
2012 ◽  
Vol 4 (6) ◽  
pp. 2029 ◽  
Author(s):  
Xiao Long Deng ◽  
Sahwan Hong ◽  
Inrok Hwang ◽  
Jin-Soo Kim ◽  
Ji Hoon Jeon ◽  
...  
Keyword(s):  
Single Crystal ◽  
Resistive Switching ◽  
Cu2o Films ◽  
Switching Characteristics

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

2011 ◽  
Vol 99 (5) ◽  
pp. 052105 ◽  
Author(s):  
Sahwan Hong ◽  
Deng Xiao Long ◽  
Inrok Hwang ◽  
Jin-Soo Kim ◽  
Yun Chang Park ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Resistance ◽  
Switching Mechanism ◽  
Resistance State ◽  
Cu2o Films ◽  
Unipolar Resistive Switching ◽  
Resistive Switching Mechanism

Temporary Resistive Switching Effect in Cu2O Based Heterostructure

2013 ◽  
Vol 401-403 ◽  
pp. 836-839
Author(s):  
Chang Kun Wu ◽  
Yong Dan Zhu ◽  
Hong Hua Liao ◽  
Jian Jun Tan
Keyword(s):  
Resistive Switching ◽  
Oxygen Pressure ◽  
Switching Effect ◽  
Carrier Injection ◽  
Cu2o Films ◽  
Reset Pulse ◽  
Resistive Switching Effect ◽  
Better Than

We report a temporary resistive switching (RS) behavior of Cu2O based heterostructure. The Cu2O films were deposited by PLD method under different oxygen pressure (10-2 Pa and 10Pa). The results show that the RS performance of Cu2O (10Pa) is better than that of Cu2O (10-2 Pa). The Cu2O (10Pa) based heterostructure shows high resistive switching ratio of over 103 at read voltage of -0.5V after applied 3V/-5V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages. It is demonstrated that the RS mechanism agrees with the carrier injection-trapped/detrapped process at the interface.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation
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