Direct modulation of excited state quantum dot lasers

2009 ◽  
Vol 95 (6) ◽  
pp. 061101 ◽  
Author(s):  
B. J. Stevens ◽  
D. T. D. Childs ◽  
H. Shahid ◽  
R. A. Hogg
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Direct Modulation

Temperature-Stable 25-Gbps Direct-Modulation in 1.3-μm InAs/GaAs Quantum Dot Lasers

2012 ◽  
Author(s):  
Mitsuru Ishida ◽  
Manabu Matsuda ◽  
Yu Tanaka ◽  
Kan Takada ◽  
Mitsuru Ekawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Direct Modulation ◽  
Gaas Quantum Dot

25 Gbps Direct Modulation in 1.3-μm InAs/GaAs High-Density Quantum Dot Lasers

2010 ◽  
Author(s):  
Yu Tanaka ◽  
Mitsuru Ishida ◽  
Kan Takada ◽  
Tsuyoshi Yamamoto ◽  
Hai-zhi Song ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Density ◽  
Quantum Dot Lasers ◽  
Direct Modulation

Excited State Bilayer Quantum Dot Lasers at 1.3 µm

2011 ◽  
Vol 50 (4) ◽  
pp. 04DG10 ◽  
Author(s):  
Mohammed A. Majid ◽  
David T. D. Childs ◽  
Hifsa Shahid ◽  
Siming C. Chen ◽  
Kenneth Kennedy ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Dot Lasers

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

scholarly journals Lasing due to the excited state in quantum dot lasers

2017 ◽  
Vol 869 ◽  
pp. 012008
Author(s):  
M Abusaa ◽  
J Danckaert ◽  
E A Viktorov
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Dot Lasers

Excited State Bilayer Quantum Dot Lasers at 1.3μm

2010 ◽  
Author(s):  
M. A. Majid ◽  
D. T. D. Childs ◽  
H. Shahid ◽  
K. Kennedy ◽  
R. Airey ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Dot Lasers
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