Determination of thickness and dielectric constant of thin films by dual-wavelength light beaming effect of a metal nanoslit

2009 ◽  
Vol 106 (3) ◽  
pp. 034305 ◽  
Author(s):  
Jian Zhang ◽  
Guo Ping Wang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dual Wavelength ◽  
Wavelength Light

Determination of dielectric constant and loss of high-K thin films in the microwave frequencies

Measurement ◽  
2010 ◽  
Vol 43 (4) ◽  
pp. 556-562 ◽  
Author(s):  
K. Sudheendran ◽  
D. Pamu ◽  
M. Ghanashyam Krishna ◽  
K.C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Microwave Frequencies ◽  
Dielectric Constant And Loss ◽  
High K

Dielectric constant measurements of thin films and liquids using terahertz metamaterials

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 69381-69386 ◽  
Author(s):  
S. J. Park ◽  
S. A. N. Yoon ◽  
Y. H. Ahn
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Polymer Films ◽  
Dielectric Constants ◽  
Polar Liquids ◽  
Terahertz Metamaterials

In this paper, we demonstrate that terahertz (THz) metamaterials are powerful tools for determination of dielectric constants of polymer films and polar liquids.

DETERMINATION OF DENSITY-OF-STATES OF NANOCLUSTER CARBON THIN FILMS MIS STRUCTURE USING CAPACITANCE–VOLTAGE TECHNIQUE

2011 ◽  
Vol 25 (10) ◽  
pp. 763-772 ◽  
Author(s):  
SHOUNAK DE ◽  
JHUMA GOPE ◽  
B. S. SATYANARAYANA ◽  
O. S. PANWAR ◽  
MOHAN RAO
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Mis Structure ◽  
Defect States ◽  
Metal Insulator ◽  
Capacitance Voltage ◽  
Carbon Thin Films ◽  
Density Of Defect States ◽  
Cathodic Arc

Nanocluster carbon thin films (NC) were deposited at room temperature by cathodic arc process. These films were clustered, amorphous and disordered in nature which is verified using Raman spectroscopy. Density of defect states (DOS), which influences electronic and optical properties, were determined from the capacitance–voltage (C–V) characteristic of Al / NC / c - Si metal–insulator–semiconductor (MIS) structure near the Fermi level of undoped samples. Dielectric constant of the films was also estimated using the same technique. The DOS were found to be varying from 5.68 × 1016 to 4.9 × 1019 cm-3. The dielectric constant varied between 2.76 to 11.8.

scholarly journals Determination of Dielectric Constant of Stearic Acid Films Using Varying Gap Immersion Method

1977 ◽  
Vol 4 (1) ◽  
pp. 23-28 ◽  
Author(s):  
V. K. Agarwal ◽  
B. Ichijo
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Stearic Acid ◽  
Reasonable Agreement ◽  
Langmuir Films ◽  
Immersion Method ◽  
Experimental Tool ◽  
High Degree

The dielectric constant data (at 3.5 MHz) on stearic acid thin films, obtained by using variable gap immersion method, are presented. Many of the errors of the conventional universal bridge method are eliminated in the method used here. It is also shown that the varying gap immersion method serves as an experimental tool for simultaneous determination of film thickness with high degree of accuracy. The data on evaporated as well as Langmuir films of stearic acid (≥1000 Å) are found to be consistent and in reasonable agreement.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

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