Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

2009 ◽  
Vol 106 (2) ◽  
pp. 024109 ◽  
Author(s):  
X. H. Zhu ◽  
B. Guigues ◽  
E. Defaÿ ◽  
C. Dubarry ◽  
M. Aïd
Keyword(s):  
Thin Films ◽  
Thermal Strain ◽  
Dielectric Anisotropy ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Thermal strain in indium thin films deposited on GaAs substrates

1994 ◽  
Vol 250 (1-2) ◽  
pp. 164-171
Author(s):  
H. Ijichi ◽  
O. Tadanaga ◽  
A. Otsuki ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Thermal Strain ◽  
Gaas Substrates

Micropatterning research of silicon-based ferroelectric PMNT thin films

2005 ◽  
Author(s):  
Qingtao Zhang ◽  
Yanqiu Li ◽  
Yonghong Shang
Keyword(s):  
Thin Films ◽  
Silicon Based

Influence of rapid thermal-annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates

1990 ◽  
Author(s):  
Joseph M. Baixeras ◽  
Francois Carrie ◽  
Ferechteh Hosseini Teherani ◽  
Alain J. Kreisler
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Based

Purposeful Chemical Design of Mocvd Precursors for Silicon-Based Systems

1988 ◽  
Vol 131 ◽  
Author(s):  
Bernard J. Aylett
Keyword(s):  
Thin Films ◽  
Design And Synthesis ◽  
Mild Conditions ◽  
Metal Silicides ◽  
Chemical Design ◽  
Mocvd Precursors ◽  
Silicon Based ◽  
Metal Bonds ◽  
Molecular Compounds

ABSTRACTIt is shown that volatile molecular compounds with silicon-metal bonds can act as effective MOCVD precursors to metal silicides, which aredeposited as thin films under relatively mild conditions. Strategies for the design and synthesis of such “prevenient” precursors are explored, and possible extensions of this approach are considered.

scholarly journals Imaging of Chemical Reactions Using a Terahertz Chemical Microscope

Photonics ◽  
2019 ◽  
Vol 6 (1) ◽  
pp. 10 ◽  
Author(s):  
Toshihiko Kiwa ◽  
Tatsuki Kamiya ◽  
Taiga Morimoto ◽  
Kentaro Fujiwara ◽  
Yuki Maeno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Reactions ◽  
Field Effect ◽  
Film Surface ◽  
Experimental Setup ◽  
Substrate Side ◽  
Surface Field ◽  
Silicon Based ◽  
Si Thin Film

This study develops a terahertz (THz) chemical microscope (TCM) that visualizes the distribution of chemical reaction on a silicon-based sensing chip. This chip, called the sensing plate, was fabricated by depositing Si thin films on a sapphire substrate and thermally oxidizing the Si film surface. The Si thin film of the sensing plate was irradiated from the substrate side by a femtosecond laser, generating THz pulses that were radiated into free space through the surface field effect of the Si thin film. The surface field responds to chemical reactions on the surface of the sensing plate, changing the amplitude of the THz pulses. This paper first demonstrates the principle and experimental setup of the TCM and performs the imaging and measurement of chemical reactions, including the reactions of bio-related materials.

Dépôt chimique en phase vapeur et à basse pression de couches minces à base de silicium dans un réacteur à lampes halogène

2000 ◽  
Vol 77 (9) ◽  
pp. 737-743
Author(s):  
B Semmache ◽  
S Kallel ◽  
H El Omari ◽  
M Lemiti ◽  
A Laugier
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Environmental Safety ◽  
Device Fabrication ◽  
Process Time ◽  
Halogen Lamp ◽  
New Device ◽  
Si Films ◽  
Silicon Based

Low-pressure chemical vapor deposition (LPCVD) in halogen lamp-heated reactor (RTLPCVD: rapid thermal LPCVD) is a promising technique for silicon-based thin films deposition. Indeed, overall process time and gas consumption reduction in RTP reactors allows to project new device fabrication technologies (microsensors, solar cells) in order to reach a higher environmental safety with respect to classical technologies.Various gases available on our RTP installation (SiH4, NH3, N2O, O2, PH3, B2H6) enable several silicon-based thin films RTLPCVD deposition: intrinsic polycrystalline silicon (poly-Si) films or in situ doped poly-Si, silicon nitride (Si-N) and oxynitride (Si-O-N). In this paper, we discuss our results on deposition kinetics and physical properties of these thin films. It appeared that RTLPCVD silicon-based thin films with interesting structural, electrical, and optical properties can be synthesized in our lamp-heated reactor with a tight control of process parameters such as temperature, pressure, and gas flow ratios.

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