Water adsorption onto Y and V sites at the surface of the YVO4 photocatalyst and related electronic properties

2009 ◽  
Vol 131 (3) ◽  
pp. 034701 ◽  
Author(s):  
Mitsutake Oshikiri ◽  
Mauro Boero ◽  
Akiyuki Matsushita ◽  
Jinhua Ye
Keyword(s):  
Electronic Properties ◽  
Water Adsorption

Free Energy and Electronic Properties of Water Adsorption on the SnO2(110) Surface

Langmuir ◽  
2013 ◽  
Vol 29 (18) ◽  
pp. 5487-5499 ◽  
Author(s):  
Gianluca Santarossa ◽  
Konstanze Hahn ◽  
Alfons Baiker
Keyword(s):  
Free Energy ◽  
Electronic Properties ◽  
Water Adsorption

scholarly journals How do the doping concentrations of N and B in graphene modify the water adsorption?

RSC Advances ◽  
2021 ◽  
Vol 11 (32) ◽  
pp. 19560-19568
Author(s):  
Thi Tan Pham ◽  
Thanh Ngoc Pham ◽  
Viorel Chihaia ◽  
Quang Anh Vu ◽  
Thuat T. Trinh ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Water Adsorption ◽  
Geometrical Structure ◽  
Adsorbed Water ◽  
Doping Content ◽  
B Doping

N and B doping content in graphene alters the microscopic geometrical structure and electronic properties of adsorbed water.

scholarly journals Structural and dynamical properties of water adsorption on PtO2(001)

RSC Advances ◽  
2018 ◽  
Vol 8 (27) ◽  
pp. 15078-15086 ◽  
Author(s):  
Yong Yang
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Water Adsorption ◽  
Water Molecules ◽  
First Principles Calculations ◽  
Dynamical Properties

The structural, dynamical and electronic properties of water molecules on the β-PtO2(001) surface has been studied using first-principles calculations.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt

Electronic properties of TTF-TCNQ : a connection between theory and experiment

1978 ◽  
Vol 39 (12) ◽  
pp. 1355-1363 ◽  
Author(s):  
L.G. Caron ◽  
M. Miljak ◽  
D. Jerome
Keyword(s):  
Electronic Properties ◽  
Theory And Experiment
Sign in / Sign up

Export Citation Format

Share Document