Strain relaxation in Si/Ge/Si nanoscale bars from molecular dynamics simulations

2009 ◽  
Vol 106 (3) ◽  
pp. 034304 ◽  
Author(s):  
Yumi Park ◽  
Hasan Metin Atkulga ◽  
Ananth Grama ◽  
Alejandro Strachan
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Strain Relaxation ◽  
Dynamics Simulations

A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates

1994 ◽  
Vol 340 ◽  
Author(s):  
G J Moran ◽  
I Morrison ◽  
C C Matthai
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Elasticity Theory ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Thin Layers ◽  
Misfit Dislocations ◽  
Strain Relief ◽  
Gaas Substrates ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured.

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