Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

G. Bakan; A. Cywar; H. Silva; A. Gokirmak

doi:10.1063/1.3159877

Measurements of Liquid Silicon Resistivity on Silicon Microwires

MRS Proceedings ◽

10.1557/proc-1178-aa06-06 ◽

2009 ◽

Vol 1178 ◽

Cited By ~ 6

Author(s):

Gokhan Bakan ◽

Kadir Cil ◽

Adam Cywar ◽

Helena Silva ◽

Ali Gokirmak

Keyword(s):

Voltage Pulse ◽

Nanocrystalline Silicon ◽

Current Level ◽

Liquid Silicon ◽

The Wire ◽

Voltage Pulses ◽

Silicon Microwires ◽

Minimum Resistance ◽

Good Agreement

AbstractNanocrystalline silicon microwires are self-heated through microsecond voltage pulses. Nonlinear changes in current level are observed during the voltage pulse, which end with melting of the microwires. Liquid silicon resistivity is extracted as 65.9 ± 6.1 μΩ.cm from the minimum resistance of the wire during the voltage pulse. The extracted resistivity is in good agreement with previously reported values.

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Self-heating of silicon microwires: Crystallization and thermoelectric effects

Journal of Materials Research ◽

10.1557/jmr.2011.32 ◽

2011 ◽

Vol 26 (9) ◽

pp. 1061-1071 ◽

Cited By ~ 25

Author(s):

Gokhan Bakan ◽

Niaz Khan ◽

Adam Cywar ◽

Kadir Cil ◽

Mustafa Akbulut ◽

...

Keyword(s):

Thermoelectric Effects ◽

Self Heating ◽

Silicon Microwires ◽

Image Position

Abstract

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Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

Ukrainian Journal of Physics ◽

10.15407/ujpe65.3.236 ◽

2020 ◽

Vol 65 (3) ◽

pp. 236

Author(s):

R. M. Rudenko ◽

O. O. Voitsihovska ◽

V. V. Voitovych ◽

M. M. Kras’ko ◽

A. G. Kolosyuk ◽

...

Keyword(s):

Amorphous Silicon ◽

Crystalline Silicon ◽

Solid Phase ◽

Nanocrystalline Silicon ◽

Recrystallization Temperature ◽

Nanocrystalline Phase ◽

Silicon Phase ◽

Silicon Nanocrystallites ◽

Lower Temperature ◽

Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-536-275 ◽

1998 ◽

Vol 536 ◽

Author(s):

A. B. Pevtsov ◽

N. A. Feoktistov ◽

V. G. Golubev

Keyword(s):

Thin Films ◽

Film Thickness ◽

Percolation Theory ◽

Nanocrystalline Silicon ◽

Spatial Light Modulators ◽

Light Emitting ◽

Light Modulators ◽

Silicon Thin Films ◽

Longitudinal Conductivity ◽

Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

MRS Proceedings ◽

10.1557/proc-762-a7.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Z.B. Zhou ◽

G.M. Hadi ◽

R.Q. Cui ◽

Z.M. Ding ◽

G. Li

Keyword(s):

Solar Cell ◽

Ion Beam ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Chamber Pressure ◽

Ion Beam Sputtering ◽

High Hydrogen ◽

Beam Sputtering ◽

Si Films ◽

Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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