Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb

2009 ◽  
Vol 95 (2) ◽  
pp. 022101 ◽  
Author(s):  
J. M. Qin ◽  
B. Yao ◽  
Y. Yan ◽  
J. Y. Zhang ◽  
X. P. Jia ◽  
...  
Keyword(s):  
High Pressure ◽  
Carrier Concentration ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type

scholarly journals Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Deng-Feng Li ◽  
Min Luo ◽  
Bo-Lin Li ◽  
Cheng-Bing Wu ◽  
Bo Deng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
First Principles ◽  
Ionization Energy ◽  
Formation Energy ◽  
First Principles Calculations ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type ◽  
Codoping Method

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of singleNScan be lowered by introducing theIIIZn-NS(III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.

Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N

2013 ◽  
Vol 6 (12) ◽  
pp. 121002 ◽  
Author(s):  
Toru Sugiyama ◽  
Daisuke Iida ◽  
Toshiki Yasuda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
Si Doped

Beryllium-Implanted P-Type GaN with High Carrier Concentration

2001 ◽  
Vol 40 (Part 2, No. 5A) ◽  
pp. L417-L419 ◽  
Author(s):  
Chang-Chin Yu ◽  
Chen-Fu Chu ◽  
Juen-Yen Tsai ◽  
Chia-Feng Lin ◽  
Wen-How Lan ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
High Carrier Concentration ◽  
High Carrier ◽  
P Type

scholarly journals Fluorine ion induced phase evolution of tin-based perovskite thin films: structure and properties

RSC Advances ◽  
2019 ◽  
Vol 9 (63) ◽  
pp. 37119-37126 ◽  
Author(s):  
Junsheng Wu ◽  
Fang Fang ◽  
Zhuo Zhao ◽  
Tong Li ◽  
Rizwan Ullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Light Absorption ◽  
Oxidation Process ◽  
Phase Evolution ◽  
Structure And Properties ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier

Fluorine dopant inhibited the oxidation process in CsSnI3−xFx films with high carrier concentration, low resistivity and wide light absorption.

Effect of ITO Carrier Concentration on the Performance of Organic Light-Emitting Diodes

1999 ◽  
Vol 598 ◽  
Author(s):  
Furong Zhu ◽  
Keran Zhang ◽  
C. H. A. Huan ◽  
A.T.S. Wee ◽  
Ewald Guenther ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Indium Tin Oxide ◽  
Film Deposition ◽  
Hole Injection ◽  
Maximum Efficiency ◽  
High Carrier Concentration ◽  
Band Bending ◽  
Light Emitting ◽  
Organic Light ◽  
High Carrier

ABSTRACTThe indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm−3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm−3. The increase in electroluminescent efficie ncy reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration

scholarly journals Synergistic boost of output power density and efficiency in In-Li–codoped SnTe

2019 ◽  
Vol 116 (44) ◽  
pp. 21998-22003 ◽  
Author(s):  
Fengkai Guo ◽  
Haijun Wu ◽  
Jianbo Zhu ◽  
Honghao Yao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Power Density ◽  
Output Power ◽  
Traditional Method ◽  
Lattice Thermal Conductivity ◽  
Heat Output ◽  
Leg Length ◽  
Temperature Dependent ◽  
High Carrier Concentration ◽  
High Carrier

We report enhanced thermoelectric performance of SnTe by further increasing its intrinsic high carrier concentration caused by Sn vacancies in contrast to the traditional method. Along with In2Te3 alloying, which results in an enhanced Seebeck coefficient, Li2Te is added to further increase the carrier concentration in order to maintain high electrical conductivity. Finally, a relatively high PFave of ∼28 μW cm−1 K−2 in the range between 300 and 873 K is obtained in an optimized SnTe-based compound. Furthermore, nanoprecipitates with extremely high density are constructed to scatter phonons strongly, resulting in an ultralow lattice thermal conductivity of ∼0.45 W m−1 K−1 at 873 K. Given that the Z value is temperature dependent, the (ZT)eng and (PF)eng values are adopted to accurately predict the performance of this material. Taking into account the Joule and Thomson heat, output power density of ∼5.53 W cm−2 and leg efficiency of ∼9.6% are calculated for (SnTe)2.94(In2Te3)0.02-(Li2Te)0.045 with a leg length of 4 mm and cold- and hot-side temperatures of 300 and 870 K, respectively.

Systematic Studies on Magnetron-Sputtered Indium Nitride

1992 ◽  
Vol 242 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
J. S. Morgan ◽  
T. O. Poehler ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Inert Gases ◽  
Morphological Transition ◽  
Heteroepitaxial Growth ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Nitrogen Vacancies

ABSTRACTExtensive and systematic studies on reactive magnetron sputtering of InN thin films are summarized. The films have been deposited onto several types of substrates, with variations in such process parameters as deposition temperature, partial pressures of reactive and inert gases, sputtering power and gas flows. These films have been characterized by measuring their electrical, optical, structural and morphological properties. It has been shown that epitaxial growth of InN occurs on the basal plane of single-crystal (00.1) sapphire and (001) mica substrates and on the (111) face of cubic substrates such as silicon and zirconia.Two principal problems currently limit the usefulness of thin films of InN. First, although epitaxy can be attained with the proper choice of substrate type and deposition temperature, the resulting film is an agglomerate of epitaxial grains -- not a single crystal. Second, all magnetron sputtered InN films prepared to date have low mobility and high carrier concentration (likely due to nitrogen vacancies). In an attempt to address these problems, experiments on the growth and characterization of sputtered InN films have been carried out and are discussed here with particular emphasis on seeded heteroepitaxial growth and the effects of film deposition temperature.For example, it was found early that the growth of InN on the bare surface of several crystalline substrates at growth temperatures near 350°C results in a morphological transition that causes a degradation of semiconducting properties. The predeposition of an AIN seed layer inhibits this morphological transition and stabilizes a relatively high mobility state, but a still too high carrier concentration obtains. Further progress critically depends on optimizing the seeded heteroepitaxial growth technique in conjunction with the achievement of InN films with lower density of nitrogen vacancies.

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