Fatigue rates of monocrystalline silicon thin films in harsh environments: Influence of stress amplitude, relative humidity, and temperature

2009 ◽  
Vol 94 (18) ◽  
pp. 181915 ◽  
Author(s):  
P.-O. Theillet ◽  
O. N. Pierron
Keyword(s):  
Thin Films ◽  
Relative Humidity ◽  
Stress Amplitude ◽  
Monocrystalline Silicon ◽  
Harsh Environments ◽  
Silicon Thin Films

Large-area monocrystalline silicon thin films by annealing of macroporous arrays: Understanding and tackling defects in the material

2009 ◽  
Vol 106 (3) ◽  
pp. 033516 ◽  
Author(s):  
Valérie Depauw ◽  
Ivan Gordon ◽  
Guy Beaucarne ◽  
Jef Poortmans ◽  
Robert Mertens ◽  
...  
Keyword(s):  
Thin Films ◽  
Monocrystalline Silicon ◽  
Large Area ◽  
Silicon Thin Films

Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial

2006 ◽  
Vol 88 (10) ◽  
pp. 101909 ◽  
Author(s):  
O. Marty ◽  
T. Nychyporuk ◽  
J. de la Torre ◽  
V. Lysenko ◽  
G. Bremond ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Monocrystalline Silicon ◽  
Silicon Thin Films ◽  
As Stress

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters
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