ABSTRACTNanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.
Characterization of the deformation and phase transformation behavior of VC-free and VC-containing FeMnSi-based shape memory alloys by in situ neutron diffraction