Laser Ion Source Operation at the TRIUMF Radioactive Ion Beam Facility

Author(s):  
J. Lassen ◽  
P. Bricault ◽  
M. Dombsky ◽  
J. P. Lavoie ◽  
M. Gillner ◽  
...  
2012 ◽  
Vol 83 (2) ◽  
pp. 02A904 ◽  
Author(s):  
Y. Liu ◽  
T. Gottwald ◽  
C. C. Havener ◽  
J. Y. Howe ◽  
J. Kiggans ◽  
...  

2009 ◽  
Vol 80 (8) ◽  
pp. 083304 ◽  
Author(s):  
Y. Liu ◽  
C. Baktash ◽  
J. R. Beene ◽  
Ch. Geppert ◽  
T. Gottwald ◽  
...  

2014 ◽  
Vol 27 ◽  
pp. 1460145 ◽  
Author(s):  
ALBERTO ANDRIGHETTO ◽  
MATTIA MANZOLARO ◽  
STEFANO CORRADETTI ◽  
DANIELE SCARPA ◽  
JESU VASQUEZ ◽  
...  

The SPES project at Laboratori di Legnaro of INFN (Italy) is concentrating on the production of neutron-rich radioactive nuclei for nuclear physics experiments using uranium fission at a rate of 1013 fission/s. The emphasis on neutron-rich isotopes is justified by the fact that this vast territory has been little explored. The Radioactive Ion Beam (RIB) will be produced by the ISOL technique using proton induced fission on a direct target of UCx. The most critical element of the SPES project is the Multi-Foil Direct Target. Up to the present time, the proposed target represents an innovation in terms of its capability to sustain the primary beam power. This talk will present the status of the project financed by INFN, which is actually in the construction phase at Legnaro. In particular, developments related to the target and the ion-source activities using the surface ion source, plasma ion source, and laser ion source techniques will be reported.


1998 ◽  
Vol 69 (2) ◽  
pp. 774-774
Author(s):  
R. F. Welton ◽  
G. D. Alton ◽  
B. Cui ◽  
S. N. Murray

Nukleonika ◽  
2015 ◽  
Vol 60 (2) ◽  
pp. 327-330 ◽  
Author(s):  
Oleksii Girka ◽  
Alexander Bizyukov ◽  
Ivan Bizyukov ◽  
Michael Gutkin ◽  
Sergei Mishin

Abstract The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.


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