Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1−xInxAs/GaAs quantum wells

2009 ◽  
Vol 105 (8) ◽  
pp. 084310
Author(s):  
J. T. Titantah ◽  
D. Lamoen ◽  
M. Schowalter ◽  
A. Rosenauer
Keyword(s):  
Scattering Amplitudes ◽  
Quantum Wells ◽  
Size Effects ◽  
Electron Structure ◽  
Structure Factors ◽  
Atomic Scattering

Quantum size effects in IV–VI quantum wells

2003 ◽  
Vol 17 ◽  
pp. 313-315 ◽  
Author(s):  
E.I Rogacheva ◽  
O.N Nashchekina ◽  
T.V Tavrina ◽  
M Us ◽  
M.S Dresselhaus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Existence of partial-wave two-cluster atomic scattering amplitudes

1979 ◽  
Vol 57 (3) ◽  
pp. 449-456 ◽  
Author(s):  
J. Nuttall ◽  
S. R. Singh
Keyword(s):  
Scattering Amplitudes ◽  
Partial Wave ◽  
Scattering Problem ◽  
Potential Scattering ◽  
Atomic Systems ◽  
Almost Everywhere ◽  
Cluster Threshold ◽  
Channel Potential ◽  
Atomic Scattering ◽  
Coupled Channel

It is shown, with some restrictions, that two-cluster partial wave scattering amplitudes for atomic systems whose particles interact via two-body Coulomb potentials exist almost everywhere in the energy range below any three-cluster threshold. The method of proof is to reduce the problem to a coupled channel potential scattering problem with pseudo-local potentials. Boost analyticity is used to derive the pseudo-locality.

Atomic scattering amplitudes for electron diffraction

1954 ◽  
Vol 7 (5) ◽  
pp. 405-408 ◽  
Author(s):  
J. A. Ibers ◽  
J. A. Hoerni
Keyword(s):  
Scattering Amplitudes ◽  
Electron Diffraction ◽  
Atomic Scattering

Absolute measurement of structure factors using a new dynamical interference effect

1970 ◽  
Vol 26 (2) ◽  
pp. 223-229 ◽  
Author(s):  
M. Hart ◽  
A. D. Milne
Keyword(s):  
Interference Effect ◽  
Absolute Measurement ◽  
Atomic Weight ◽  
Theoretical Background ◽  
X Ray Scattering ◽  
Lattice Strains ◽  
A Value ◽  
Structure Factors ◽  
Atomic Scattering ◽  
Scattering Factor

A new method of determining X-ray scattering factors by dynamical interference is described. The theoretical background to the interference effect is discussed in detail and an expression for relating the fringe period to the structure factor is developed. The method relies on anomalous transmission and is therefore most suitable for measurements on nearly perfect crystals of high atomic weight. It also has the attractive property of being insensitive to slowly varying lattice strains. Applying the method to the 220 reflexion of silicon a value of 8.487 ± 0.017 for the atomic scattering factor has been obtained using Mo Kα 1 radiation. This value is in excellent agreement with the author's previous results using the Pendellösung method.

IR WAVELENGTH DEPENDENCE QUANTUM SIZE EFFECTS IN Nb/SiO2 QUANTUM WELLS

2007 ◽  
Vol 21 (10) ◽  
pp. 615-623
Author(s):  
R. VILLAGÓMEZ
Keyword(s):  
Quantum Wells ◽  
Size Effects ◽  
Rf Sputtering ◽  
Wavelength Dependence ◽  
Quantum Size Effects ◽  
Field Calculation ◽  
Waveguide Laser ◽  
Metallic Films ◽  
Quantum Size ◽  
Semiconductor Compounds

This letter deals with the experimental observation of oscillations in the infrared reflectance from Nb ultra-thin films deposited on α-type SiO 2 substrates. P-polarized reflectance (Rp) measurements are made using a tunable p-polarized CO 2 waveguide laser using wavelengths between 9.2 and 10.4 μm. Several Nb/SiO 2 quantum wells were specially made by the RF sputtering technique. Tailored thicknesses run between 5.5 and 55 Å. Because of the strong influence from the chosen substrate, IR reflectivity was fitted to the optical response of our metal-substrate system by using the three-oscillator model and numerical calculations on the basis of the local field calculation for a single metallic quantum well. Although quantum size effects are well studied in semiconductor compounds, there are only a few studies of this effect in metallic films where the present investigation has its most important contribution.

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