Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

2009 ◽  
Vol 94 (12) ◽  
pp. 123501 ◽  
Author(s):  
Arun Suresh ◽  
Steven Novak ◽  
Patrick Wellenius ◽  
Veena Misra ◽  
John F. Muth
Keyword(s):  
Zinc Oxide ◽  
Platinum Nanoparticles ◽  
Gate Dielectric ◽  
Floating Gate ◽  
Indium Gallium Zinc Oxide ◽  
Floating Gate Memory ◽  
Indium Gallium

Nanocrystal Floating Gate Memory with Indium-Gallium-Zinc-Oxide Channel and Pt-Fe2O3 Core-Shell Nanocrystals

2013 ◽  
Vol 50 (8) ◽  
pp. 281-287
Author(s):  
S. C. Lee ◽  
Q. Hu ◽  
J. Y. Lee ◽  
Y.-J. Baek ◽  
H. H. Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Floating Gate ◽  
Core Shell ◽  
Indium Gallium Zinc Oxide ◽  
Floating Gate Memory ◽  
Indium Gallium

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

2008 ◽  
Vol 92 (22) ◽  
pp. 223304 ◽  
Author(s):  
Smita Sarkar ◽  
Arun Suresh ◽  
Frank B. Myers ◽  
John F. Muth ◽  
Veena Misra
Keyword(s):  
Zinc Oxide ◽  
Gate Dielectric ◽  
Indium Gallium Zinc Oxide ◽  
Redox States ◽  
Indium Gallium

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

2012 ◽  
Vol 101 (26) ◽  
pp. 261112 ◽  
Author(s):  
T. H. Chang ◽  
C. J. Chiu ◽  
W. Y. Weng ◽  
S. J. Chang ◽  
T. Y. Tsai ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Gate Dielectric ◽  
Indium Gallium Zinc Oxide ◽  
High Responsivity ◽  
Indium Gallium
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