Magnetization reversal dominated by domain wall pinning in FePt based spin valves

2009 ◽  
Vol 94 (12) ◽  
pp. 122509 ◽  
Author(s):  
A. P. Mihai ◽  
J. P. Attané ◽  
L. Vila ◽  
C. Beigné ◽  
J. C. Pillet ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetization Reversal ◽  
Spin Valves ◽  
Domain Wall Pinning

Magnetization reversal with domain-wall pinning in (Ga, Mn)As wire

2005 ◽  
Vol 41 (10) ◽  
pp. 2742-2744 ◽  
Author(s):  
T. Koike ◽  
K. Hamaya ◽  
N. Funakoshi ◽  
Y. Takemura ◽  
Y. Kitamoto ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetization Reversal ◽  
Domain Wall Pinning

Free Boundary Domain Wall Pinning Model for the Magnetization Reversal in Magnetic Thin Films

2006 ◽  
Vol 45 (1A) ◽  
pp. 93-98
Author(s):  
Shi-shen Yan ◽  
H. Garmestani ◽  
Yu-feng Tian ◽  
Shu-jun Hu ◽  
Ru-wei Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Free Boundary ◽  
Domain Wall ◽  
Magnetization Reversal ◽  
Magnetic Thin Films ◽  
Domain Wall Pinning

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

scholarly journals Subsystem domination influence on magnetization reversal in designed magnetic patterns in ferrimagnetic Tb/Co multilayers

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetization Reversal ◽  
Domain Walls ◽  
Compensation Point ◽  
Relative Sign ◽  
Reversal Process ◽  
Effective Magnetization ◽  
Domain Wall Propagation ◽  
Characteristic Features ◽  
Magnetization Reversal Process

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.

Micromagnetic study of domain-wall pinning characteristics with grooves in thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 10E317 ◽  
Author(s):  
H. Asada ◽  
H. Ii ◽  
J. Yamasaki ◽  
M. Takezawa ◽  
T. Koyanagi
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Domain Wall Pinning

Domain-wall pinning in uniaxial phases of Pb adlayers on a Cu(110) surface

1990 ◽  
Vol 65 (24) ◽  
pp. 3025-3028 ◽  
Author(s):  
K. S. Liang ◽  
K. L. D’Amico ◽  
C. H. Lee ◽  
E. Y. Sheu
Keyword(s):  
Domain Wall ◽  
Domain Wall Pinning

scholarly journals Reduced domain wall pinning in ultrathin Pt/Co100−xBx/Pt with perpendicular magnetic anisotropy

2010 ◽  
Vol 96 (2) ◽  
pp. 022501 ◽  
Author(s):  
R. Lavrijsen ◽  
G. Malinowski ◽  
J. H. Franken ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Domain Wall Pinning
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