Characterization of electrochemically grafted molecular layers on silicon for electronic device applications

2009 ◽  
Vol 105 (7) ◽  
pp. 073512 ◽  
Author(s):  
Adina Scott ◽  
David B. Janes
Keyword(s):  
Electronic Device ◽  
Device Applications ◽  
Molecular Layers

The Growth, Characterization and Electronic Device Applications of GaAs/Si

1989 ◽  
Vol 145 ◽  
Author(s):  
A. S. Jordan ◽  
S. J. Pearton ◽  
W. S. Hobson
Keyword(s):  
Electronic Device ◽  
Bulk Gaas ◽  
Selective Area ◽  
Growth Characterization ◽  
Unintentional Doping ◽  
Dislocation Densities ◽  
Device Applications ◽  
Mismatched Heteroepitaxy ◽  
Processing Techniques

AbstractWe review the growth of GaAs on Si by MO-CVD and MBE and discuss the relative merits of these techniques. Major emphasis is placed on the structural and optical characterization of the material that may be indicative of device performance. Typical GaAs layers on Si are free of anti- phase domains and the crystallinity at the surface for a 3-4μm thick deposit approaches that of bulk GaAs, as evidenced by the RBS backscattering yields and Si ion implantation profiles. The major drawbacks of GaAs heteroepitaxy on Si are the very large dislocation densities (106- 109cm−2), the relatively high unintentional doping concentration (>5 × 1014cm−3) that is partly attributable to Si outdiffusion, and the excessive bowing due to thermal expansion coefficient mismatch. While there are growth and processing techniques to overcome bowing or at least its influence, dislocations and low resistivity are hard to remedy. We discuss novel schemes to reduce dislocations (selective area growth, superlattices and thermal cycling) and efforts to improve the electrical properties (doping, optimization of V/III ratio). A variety of electronic devices and circuits have been fabricated using GaAs/Si. We shall present results on MESFETs, HBTs and HFETs processed in our laboratory and elsewhere. It is quite encouraging that HFETs with a transconductance of 220mS/mm are achievable. However, lasers in room temperature CW operation still have a very limited lifetime. Finally, we discuss the implications of GaAs/Si for a broader area of mismatched heteroepitaxy (InP/Si, InP/GaAs, etc.) and speculate on the future prospects for this new materials technology.

Synthesis and Characterization of 2,5-bis[(3,4-ethylenedioxy)thien-2-yl]-3-Substituted Thiophenes

2002 ◽  
Vol 736 ◽  
Author(s):  
Michael F. Pepitone ◽  
Kalya Eaiprasertsak ◽  
Stephen S. Hardaker ◽  
Richard V. Gregory
Keyword(s):  
Cyclic Voltammetry ◽  
Quantum Yield ◽  
Electrochemical Behavior ◽  
Electronic Device ◽  
Blue Emission ◽  
Synthesis And Characterization ◽  
Emission Characteristics ◽  
Potential Cycling ◽  
Device Applications

ABSTRACTSynthesis and functionalization of 3-bromothiophene afforded novel 2,5-bis[(3,4-ethylenedioxy)thien-2-yl]-)-3-substituted thiopehene monomers with blue emission characteristics and having a quantum yield of 3–5%. Cyclic voltammetry was employed to investigate the electrochemical behavior of the four monomers reported here. Polymer films were deposited by repeated potential cycling. These materials are considered for use in tailoring properties in opto-electronic device applications.

Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies

2007 ◽  
Vol 556-557 ◽  
pp. 13-16 ◽  
Author(s):  
Yeon Suk Jang ◽  
Sakwe Aloysius Sakwe ◽  
Peter J. Wellmann ◽  
Sandrine Juillaguet ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electronic Device ◽  
Energy Shift ◽  
Point Of View ◽  
Bandgap Energy ◽  
Physical Point ◽  
Interstitial Defect ◽  
First Results ◽  
Device Applications

We have carried out the growth and basic characterization of isotopically enriched 4HSi 13C crystals. In recent years the growth of 13C enriched 6H-SiC has been performed in order to carry out fundamental materials studies (e.g. determination of phonon energies, fundamental bandgap shift, carbon interstitial defect study, analysis of the physical vapor transport (PVT) growth process). For electronic device applications, however, the 4H-SiC polytype is the favored material, because it offers greater electron mobility. In this paper we present the growth of 4H-Si13C single crystals with up to 60% of 13C concentration. From a physical point of view we present first results on phonons as well as the fundamental bandgap energy shift due to 13C incorporation into the SiC lattice.

Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

2003 ◽  
Vol 102 (1-3) ◽  
pp. 298-303 ◽  
Author(s):  
L. Scaltrito ◽  
S. Porro ◽  
M. Cocuzza ◽  
F. Giorgis ◽  
C.F. Pirri ◽  
...  
Keyword(s):  
Electronic Device ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Device Applications

Defect characterization of 4H-SiC wafers for power electronic device applications

2002 ◽  
Vol 14 (48) ◽  
pp. 13397-13402 ◽  
Author(s):  
S Ferrero ◽  
S Porro ◽  
F Giorgis ◽  
C F Pirri ◽  
P Mandracci ◽  
...  
Keyword(s):  
Electronic Device ◽  
Defect Characterization ◽  
Power Electronic ◽  
Device Applications

scholarly journals Topological electronics

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert
Keyword(s):  
Information Processing ◽  
Physical Properties ◽  
Materials Science ◽  
Electronic Device ◽  
Condensed Matter ◽  
Topological Phases ◽  
Applied Physics ◽  
New Paradigm ◽  
Topological Materials ◽  
Device Applications

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.

Structural, optical and electrical characterization of nanocrystalline CdO films for device applications

Optik ◽  
2016 ◽  
Vol 127 (10) ◽  
pp. 4254-4257 ◽  
Author(s):  
Vipin Kumar ◽  
D.K. Sharma ◽  
Kapil K. Sharma ◽  
Sonalika Agrawal ◽  
M.K. Bansal ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Device Applications ◽  
Cdo Films
Sign in / Sign up

Export Citation Format

Share Document