Effect of a tilted electric field on the magnetoexciton ground state in a semiconductor quantum dot

2009 ◽  
Vol 105 (6) ◽  
pp. 063716 ◽  
Author(s):  
Dali Wang ◽  
Guojun Jin ◽  
Yongyou Zhang ◽  
Yu-qiang Ma
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Ground State ◽  
Semiconductor Quantum Dot

POLARON IN A QUANTUM DOT UNDER AN ELECTRIC FIELD

2007 ◽  
Vol 21 (24) ◽  
pp. 1635-1642
Author(s):  
MIAN LIU ◽  
WENDONG MA ◽  
ZIJUN LI
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Field Intensity ◽  
Ground State Energy ◽  
Ground State ◽  
Electric Field Intensity ◽  
State Energy ◽  
Theoretical Study ◽  
The Moment ◽  
Transformation Methods

We conducted a theoretical study on the properties of a polaron with electron-LO phonon strong-coupling in a cylindrical quantum dot under an electric field using linear combination operator and unitary transformation methods. The changing relations between the ground state energy of the polaron in the quantum dot and the electric field intensity, restricted intensity, and cylindrical height were derived. The numerical results show that the polar of the quantum dot is enlarged with increasing restricted intensity and decreasing cylindrical height, and with cylindrical height at 0 ~ 5 nm , the polar of the quantum dot is strongest. The ground state energy decreases with increasing electric field intensity, and at the moment of just adding electric field, quantum polarization is strongest.

Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

2011 ◽  
Vol 99 (18) ◽  
pp. 181109 ◽  
Author(s):  
T. Nakaoka ◽  
Y. Tamura ◽  
T. Saito ◽  
T. Miyazawa ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Semiconductor Quantum Dot

THE INFLUENCE OF ELECTRIC FIELD ON THE GROUND-STATE LIFETIME OF POLARON IN A PARABOLIC QUANTUM DOT

2011 ◽  
Vol 25 (03) ◽  
pp. 203-210
Author(s):  
WEI-PING LI ◽  
JI-WEN YIN ◽  
YI-FU YU ◽  
JING-LIN XIAO
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Phonon Coupling ◽  
Phonon Interaction ◽  
Strong Electron ◽  
Electron Phonon Interaction ◽  
Parabolic Quantum Dot

The ground-state energy of polaron was obtained with strong electron-LO-phonon coupling by using a variational method of the Pekar type in a parabolic quantum dot (QD). Quantum transition occurs in the quantum system due to the electron-phonon interaction and the influence of temperature. That is the polaron transition from the ground-state to the first-excited state after absorbing a LO-phonon and it causes the changing of the polaron lifetime. Numerical calculations are performed and the results illustrate the relations of the ground-state lifetime of the polaron on the ground-state energy of polaron, the electric field strength, the temperature, the electron-LO-phonon coupling strength and the confinement length of the quantum dot.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

2013 ◽  
Author(s):  
Vladimir V. Korenev ◽  
Artem V. Savelyev ◽  
Alexey E. Zhukov ◽  
Alexander V. Omelchenko ◽  
Mikhail V. Maximov
Keyword(s):  
Quantum Dot ◽  
Analytical Model ◽  
Ground State ◽  
Quantum Dot Lasers ◽  
Semiconductor Quantum Dot

scholarly journals THE ROLE OF THE CARRIER MASS IN SEMICONDUCTOR QUANTUM DOTS

2000 ◽  
Vol 14 (17) ◽  
pp. 1753-1765 ◽  
Author(s):  
M. SINGH ◽  
V. RANJAN ◽  
VIJAY A. SINGH
Keyword(s):  
Quantum Dot ◽  
Effective Mass ◽  
Ground State ◽  
State Energy ◽  
Dimensionless Parameter ◽  
Theoretical Calculations ◽  
Dielectric Coating ◽  
Semiconductor Quantum Dot ◽  
Photoemission Data

In the present work we undertake a re-examination of effective mass theory (EMT) for a semiconductor quantum dot. We take into account the fact that the effective mass (mi) of the carrier inside the dot of radius R is distinct from the mass (m0) in the dielectric coating surrounding the dot. The electronic structure of the quantum dot is determined in crucial ways by the mass discontinuity factor β ≡mi/m0. In this connection we propose a novel quantum scale, σ, which is a dimensionless parameter proportional to β2V0R2, where V0 represents the barrier due to dielectric coating. The scale σ represents a mass modified " strength" of the potential. We show both by numerical calculations and asymptotic analysis that the charge density near the nanocrystallite surface, ρ(r=R), can be large and scales as 1/σ. This fact suggests a significant role for the surface in an EMT based model. We also show that the upshift in the ground state energy is weaker than quadratic, unlike traditional EMT based calculations, and chart its dependence on the proposed scale σ. Finally, we demonstrate that calculations based on our model compare favorably with valence band photoemission data and with more elaborate theoretical calculations.

Resonating UHF Study on Electron Correlation in a Ground State of Two Electrons Confined in 2D Quantum Dot

2012 ◽  
Vol 1423 ◽  
Author(s):  
Takuma Okunishi ◽  
Kyozaburo Takeda
Keyword(s):  
Quantum Dot ◽  
Electron Correlation ◽  
Ground State ◽  
Electron State ◽  
Wave Functions ◽  
Electron Wave ◽  
Temporal Fluctuation ◽  
Semiconductor Quantum Dot ◽  
Hartree Fock ◽  
Reference Description

ABSTRACTWe theoretically study the spatial and temporal fluctuation of two electrons confined in a semiconductor quantum dot (QD). Eigenstates are determined by the resonating unrestricted Hartree-Fock (res-UHF) approach in order to take into account the electron correlation via the configuration interaction (CI). The time-dependent (TD) wave function is, then, expanded by the UHF solutions, and the CI treatment is combined with the TD Schrödinger equation (TD-CI). The present TD-CI approach has an advantage to study how the electron correlation fluctuates the multi-electron state spatially and/or temporally through the multi-reference description of many-electron wave functions.

A QUANTUM DOT MICROCAVITY TERAHERTZ LASER

2006 ◽  
Vol 16 (02) ◽  
pp. 503-514
Author(s):  
G. S. Solomon ◽  
Z. G. Xie ◽  
M. Agrawal
Keyword(s):  
Quantum Dot ◽  
Decay Rate ◽  
Ground State ◽  
Gain Medium ◽  
Rate Equations ◽  
Nonradiative Recombination ◽  
Laser Device ◽  
High Quality ◽  
Semiconductor Quantum Dot ◽  
State Decay

We discuss a THz laser device based on a semiconductor quantum dot (QD) gain medium, where the lasing occurs through discrete conduction states. An ensemble of QDs is selectively placed in a high quality cavity, called a microdisk, which is resonant with a terahertz intersublevel QD transition. We simulate the rate equations governing lasing and discuss a variety of processes affecting lasing including nonradiative recombination and the ground state decay rate.

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