Reduced conductivity in poly(3,4-ethylenedioxythiophen)-poly(styrene sulfonate) and indium tin oxide nanocomposite for low indium tin oxide content

2009 ◽  
Vol 105 (5) ◽  
pp. 054318 ◽  
Author(s):  
Norman Mechau ◽  
Roland Groeger ◽  
Anna Prodi-Schwab ◽  
Roland Schmechel
2019 ◽  
Vol 9 (5) ◽  
pp. 503-508
Author(s):  
Hai-Yun Jiang ◽  
Hui Zeng ◽  
Shi-Hao Zhang ◽  
Ruo-Mei Wu ◽  
Man-Chuan Li ◽  
...  

An aqueous electrochromic composite poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/graphene oxide was prepared in this study by a simple one-step in-situ polymerization. This simple one-step preparation method allowed the composite to achieve good performance without post-treatment. When the composite was coated on the indium tin oxide using as electrochromic film, it exhibited a noticeable electrochromism with reversible color changes from light blue to dark blue, and showed a wider range of discoloration (33%). The composite owns a larger diffusion coefficient of lithium ions (2.95 × 10–15 cm2 s–1) and better cycling performance compared with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film.


Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.


2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  

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