Electron spin resonance of amorphous silicon

1976 ◽  
Author(s):  
U. Voget-Grote ◽  
J. Stuke ◽  
H. Wagner
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Spin Resonance

scholarly journals Photomodulated electron-spin resonance in amorphous silicon

1998 ◽  
Vol 84 (9) ◽  
pp. 4974-4978 ◽  
Author(s):  
K. Hattori ◽  
Y. Ota ◽  
K. Sato ◽  
H. Okamoto
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Defects in Hydrogenated Amorphous Silicon Carbide Alloys using Electron Spin Resonance and Photothermal Deflection Spectroscopy

2009 ◽  
Vol 1153 ◽  
Author(s):  
Brian J. Simonds ◽  
Feng Zhu ◽  
Josh Gallon ◽  
Jian Hu ◽  
Arun Madan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Carbon Concentration ◽  
Hydrogenated Amorphous Silicon ◽  
Photothermal Deflection Spectroscopy ◽  
Spin Resonance ◽  
Photothermal Deflection ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon carbide alloys are being investigated as a possible top photoelectrode in photoelectrochemical cells used for hydrogen production through water splitting. In order to be used as such, it is important that the effects of carbon concentration on bonding, and thus on the electronic and optical properties, is well understood. Electron spin resonance experiments were performed under varying experimental conditions to study the defect concentrations. The dominant defects are silicon dangling bonds. At room temperature, the spin densities varied between 1016 and 1018 spins/cm3 depending on the carbon concentration. Photothermal deflection spectroscopy, which is an extremely sensitive measurement of low levels of absorption in thin films, was performed to investigate the slope of the Urbach tail. These slopes are 78 meV for films containing the lowest carbon concentration and 98 meV for those containing the highest carbon concentration.

Electron Spin Resonance Studies of Amorphous Silicon

1980 ◽  
Vol 3 ◽  
Author(s):  
David K. Biegelsen
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Amorphous Semiconductor ◽  
Experimental Techniques ◽  
Equilibrium Behavior ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Simple Picture ◽  
Non Equilibrium

ABSTRACTElectron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.

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