We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (<300°C) and compared them with low temperature silicon dioxide (SiO2). The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.
Effect of Individual and Bi-layer Stack Gate Dielectric on Device
Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs