GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

2009 ◽  
Vol 94 (2) ◽  
pp. 023506 ◽  
Author(s):  
J. B. Rodriguez ◽  
L. Cerutti ◽  
E. Tournié
Keyword(s):  
Gaas Substrate ◽  
Room Temperature ◽  
Continuous Wave ◽  
Type I

Room-temperature continuous-wave operation of type-I GaSb-based lasers at 3.1 [micro sign]m

2009 ◽  
Vol 45 (16) ◽  
pp. 835 ◽  
Author(s):  
J.A. Gupta ◽  
P.J. Barrios ◽  
G.C. Aers ◽  
P. Waldron ◽  
C. Storey
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Type I ◽  
Continuous Wave Operation

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

Continuous-wave room temperature operated 3.0μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers

2008 ◽  
Vol 92 (9) ◽  
pp. 091106 ◽  
Author(s):  
T. Hosoda ◽  
G. Belenky ◽  
L. Shterengas ◽  
G. Kipshidze ◽  
M. V. Kisin
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Type I

Near room temperature continuous-wave laser operation from type-I interband transitions at wavelengths beyond 4 μm

2010 ◽  
Vol 97 (6) ◽  
pp. 061103 ◽  
Author(s):  
M. Eibelhuber ◽  
T. Schwarzl ◽  
S. Pichler ◽  
W. Heiss ◽  
G. Springholz
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Type I ◽  
Laser Operation ◽  
Continuous Wave Laser ◽  
Interband Transitions ◽  
Wave Laser

Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [micro sign]m wavelength range around room temperature

2011 ◽  
Vol 47 (1) ◽  
pp. 46 ◽  
Author(s):  
L. Naehle ◽  
S. Belahsene ◽  
M.von. Edlinger ◽  
M. Fischer ◽  
G. Boissier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Type I ◽  
Continuous Wave Operation ◽  
Dfb Laser
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