Magnetotransport in two-dimensional n-InGaAs∕GaAs double-quantum-well structures near the transition from the insulator to the quantum Hall effect regime

2009 ◽  
Vol 35 (1) ◽  
pp. 32-43 ◽  
Author(s):  
Yu. G. Arapov ◽  
I. V. Karskanov ◽  
G. I. Harus ◽  
V. N. Neverov ◽  
N. G. Shelushinina ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Double Quantum ◽  
Two Dimensional ◽  
Quantum Well Structures ◽  
Double Quantum Well

Quantum Hall effect in double-quantum-well systems

1991 ◽  
Vol 43 (11) ◽  
pp. 9339-9342 ◽  
Author(s):  
Song He ◽  
X. C. Xie ◽  
S. Das Sarma ◽  
F. C. Zhang
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Double Quantum ◽  
Double Quantum Well

Quantum Hall effect in an InAs∕AlSb double quantum well

2009 ◽  
Vol 35 (1) ◽  
pp. 44-47 ◽  
Author(s):  
M. V. Yakunin ◽  
S. M. Podgornykh ◽  
Yu. G. Sadofyev
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Double Quantum ◽  
Double Quantum Well

scholarly journals Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well

2020 ◽  
Vol 102 (16) ◽  
Author(s):  
M. V. Yakunin ◽  
S. S. Krishtopenko ◽  
W. Desrat ◽  
S. M. Podgornykh ◽  
M. R. Popov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Double Quantum ◽  
Double Quantum Well

Scaling in the Quantum Hall Regime for a Double Quantum Well Nanostructure in High Magnetic Field

2014 ◽  
Vol 215 ◽  
pp. 208-213
Author(s):  
Yurii G. Arapov ◽  
Svetlana V. Gudina ◽  
Anna S. Klepikova ◽  
Vladimir N. Neverov ◽  
Sergey G. Novokshonov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Electron Interaction ◽  
Double Quantum ◽  
Integer Quantum Hall Effect ◽  
Double Quantum Well ◽  
Scaling Hypothesis ◽  
Before And After

The longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are investigated in the integer quantum Hall effect regime in n-InGaAs/GaAs double quantum well nanostructures in the magnetic fields B up to 16 T at temperatures T = (0.05-4.2) K before and after IR illumination. The analysis of the quantum Hall effect plateau-plateau transitions based on the scaling hypothesis with regard to electron-electron interaction was carried out.

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