Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

2009 ◽  
Vol 105 (7) ◽  
pp. 07D131 ◽  
Author(s):  
S. Yakata ◽  
H. Kubota ◽  
Y. Suzuki ◽  
K. Yakushiji ◽  
A. Fukushima ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer ◽  
Switching Current

Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

2008 ◽  
Vol 103 (7) ◽  
pp. 07A710 ◽  
Author(s):  
Masahiko Nakayama ◽  
Tadashi Kai ◽  
Naoharu Shimomura ◽  
Minoru Amano ◽  
Eiji Kitagawa ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer

scholarly journals Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Eric Arturo Montoya ◽  
Jen-Ru Chen ◽  
Randy Ngelale ◽  
Han Kyu Lee ◽  
Hsin-Wei Tseng ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Magnetic Anisotropy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

2017 ◽  
Vol 9 (12) ◽  
pp. e451-e451 ◽  
Author(s):  
Takayuki Nozaki ◽  
Anna Kozioł-Rachwał ◽  
Masahito Tsujikawa ◽  
Yoichi Shiota ◽  
Xiandong Xu ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Voltage Control ◽  
Highly Efficient

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Current Status ◽  
Access Memory ◽  
Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

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