Erratum: “Response to 'Comment on 'Deformation mechanisms of face-centered-cubic metal nanowires with twin boundaries'” [Appl. Phys. Lett. 93, 086102 (2008)]

2008 ◽  
Vol 93 (24) ◽  
pp. 249901
Author(s):  
A. J. Cao ◽  
Y. G. Wei ◽  
Scott X. Mao
Keyword(s):  
Deformation Mechanisms ◽  
Metal Nanowires ◽  
Face Centered Cubic ◽  
Twin Boundaries ◽  
Face Centered

Interactions between non-screw lattice dislocations and coherent twin boundaries in face-centered cubic metals

2008 ◽  
Vol 56 (5) ◽  
pp. 1126-1135 ◽  
Author(s):  
Z.-H. Jin ◽  
P. Gumbsch ◽  
K. Albe ◽  
E. Ma ◽  
K. Lu ◽  
...  
Keyword(s):  
Face Centered Cubic ◽  
Twin Boundaries ◽  
Cubic Metals ◽  
Face Centered

Size-dependent structural phase transition of face-centered-cubic metal nanowires

2007 ◽  
Vol 22 (5) ◽  
pp. 1299-1305 ◽  
Author(s):  
F. Ma ◽  
K.W. Xu
Keyword(s):  
Surface Energy ◽  
Metastable Phase ◽  
Structural Phase ◽  
Intrinsic Stress ◽  
Metal Nanowires ◽  
Face Centered Cubic ◽  
Phase Transform ◽  
Face Centered ◽  
Epitaxial Bain Paths ◽  
External Stimuli

Taking Au as an example, we have investigated the epitaxial bain paths of 〈001〉 oriented face-centered-cubic metal nanowires. It demonstrates that there are one stable and one metastable phase, having the lattice constant ratio c/a of about 0.6 and 1.0, respectively. Even without any external stimuli, the surface-tension-induced intrinsic stress in the interior may drive the nanowires to phase transform spontaneously for surface-energy minimization. However, this structural transition depends on the feature sizes of the nanowires. Specifically, only when the cross-section areas are reduced to 4.147 nm2 or so can the surface energy and the intrinsic stress satisfy the thermodynamic and kinetic conditions simultaneously.

Twin boundaries in GaAs grown on Ge

1987 ◽  
Vol 45 ◽  
pp. 338-339
Author(s):  
N.-H. Cho
Keyword(s):  
Grain Boundaries ◽  
Growth Surface ◽  
Polycrystalline Materials ◽  
High Electron ◽  
Face Centered Cubic ◽  
Twin Boundaries ◽  
Direct Band ◽  
Dynamical Coupling ◽  
Face Centered

Interest in the structure of grain boundaries in semiconductors has been increasing for many reasons including the important role of boundaries on the electrical behavior of polycrystalline materials. GaAs is of interest because of its particular electrical properties such as its direct band gap and high electron mobility. Specific bicrystals of GaAs were produced on substrates cut from Czochralski-grown germanium bicrystals in a low-pressure organometallic vapor- phase epitaxy system. When the growth surface was parallel to the (110) plane, many microtwins were produced in the GaAs epilayer. The structure of twin boundaries in GaAs can take two forms depending on the relative polarities of the two adjoining grains because GaAs has a sphalerite structure which is a face-centered cubic lattice with a two atom basis. The polarity of the two grains meeting at the grain boundaries can be determined by using the dynamical coupling effects of high-order Laue-zone reflections on the (200) and (200) diffracted beams.

Atomic structures of twin boundaries in CoO

2021 ◽  
Author(s):  
Wandong Xing ◽  
Yang Zhang ◽  
Jizhe Cui ◽  
Shiyou Liang ◽  
Fanyan Meng ◽  
...  
Keyword(s):  
Rock Salt ◽  
Face Centered Cubic ◽  
Twin Boundaries ◽  
Fcc Metals ◽  
Atomic Structures ◽  
Twinning Plane ◽  
Face Centered ◽  
Fcc Structure

The twinning plane of crystals with face-centered-cubic (FCC) structure is usually the (111) plane, as found in FCC metals and oxides with FCC sublattice of oxygen, like rock-salt-type NiO and...

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