Ferroelectric switching dynamics in VDF-TrFE copolymer thin films spin coated on Si substrate

2009 ◽  
Vol 105 (6) ◽  
pp. 061636 ◽  
Author(s):  
T. Furukawa ◽  
S. Kanai ◽  
A. Okada ◽  
Y. Takahashi ◽  
R. Yamamoto
Keyword(s):  
Thin Films ◽  
Si Substrate ◽  
Switching Dynamics ◽  
Ferroelectric Switching

scholarly journals Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kyoungjun Lee ◽  
Kunwoo Park ◽  
Hyun-Jae Lee ◽  
Myeong Seop Song ◽  
Kyu Cheol Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Barrier ◽  
Oxygen Deficiency ◽  
Polar Phase ◽  
Switching Speed ◽  
Transmission Electron ◽  
Switching Dynamics ◽  
Scanning Transmission ◽  
Si Doped ◽  
Ferroelectric Switching

AbstractInvestigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO2 thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO2 phase. Rapid high-temperature (800 °C) annealing of the HfO2 film accelerated the characteristic switching speed compared to low-temperature (600 °C) annealing. Scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) revealed that thermal annealing increased oxygen deficiencies, and first-principles calculations demonstrated a reduction of the energy barrier of the polarization flip with increased oxygen deficiency. A Monte Carlo simulation for the variation in the energy barrier of the polarization flipping confirmed the increase of characteristic switching speed.

scholarly journals Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

2018 ◽  
Vol 113 (8) ◽  
pp. 082903 ◽  
Author(s):  
J. P. B. Silva ◽  
K. Kamakshi ◽  
R. F. Negrea ◽  
C. Ghica ◽  
J. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Switching Dynamics ◽  
Ferroelectric Switching

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Mechanically Induced Ferroelectric Switching in BaTiO 3 Thin Films

2019 ◽  
Author(s):  
Bo Wang ◽  
Haidong Lu ◽  
Chung Wung Bark ◽  
Chang-Beom Eom ◽  
Alexei Gruverman ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Switching

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

scholarly journals Local Probe Comparison of Ferroelectric Switching Event Statistics in the Creep and Depinning Regimes in Pb(Zr0.2Ti0.8)O3 Thin Films

2021 ◽  
Vol 126 (11) ◽  
Author(s):  
Philippe Tückmantel ◽  
Iaroslav Gaponenko ◽  
Nirvana Caballero ◽  
Joshua C. Agar ◽  
Lane W. Martin ◽  
...  
Keyword(s):  
Thin Films ◽  
Switching Event ◽  
Ferroelectric Switching

Correction to “Influence of the Si Substrate on the Transport and Magnetotransport Properties of Nanostructured Fe-Ag Thin Films” [Nov 09 2784-2787]

2009 ◽  
Vol 45 (9) ◽  
pp. 3365-3365
Author(s):  
Javier Alonso ◽  
Iaki Orue ◽  
M. Fdez-Gubieda ◽  
Jos Manuel Barandiaran ◽  
Jess Chaboy ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrate

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

Temperature dependence of ZnO thin films grown on Si substrate

2007 ◽  
Vol 19 (8-9) ◽  
pp. 749-754 ◽  
Author(s):  
Y. Y. Kim ◽  
C. H. Ahn ◽  
S. W. Kang ◽  
B. H. Kong ◽  
S. K. Mohanta ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Zno Thin Films ◽  
Si Substrate
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