Effect of Bi2O3 seed layer on crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering method

2009 ◽  
Vol 105 (6) ◽  
pp. 061613 ◽  
Author(s):  
Wu Yunyi ◽  
Zhang Duanming ◽  
Yu Jun ◽  
Wang Yunbo
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Crystalline Orientation

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Growth of highly oriented Pt(100) thin films on a MgO(100) seed layer deposited on Si(100) substrates by rf magnetron sputtering

1997 ◽  
Vol 90 (3) ◽  
pp. 229-233 ◽  
Author(s):  
Chang-Seung Lee ◽  
Sung-Woong Chung ◽  
Yong-Chun Kim ◽  
In-Seop Chung ◽  
Dang-Moon Wee ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Seed Layer ◽  
Rf Magnetron Sputtering

FERROELECTRIC PROPERTIES OF Ba0.8Sr0.2TiO3 THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2006 ◽  
Vol 79 (1) ◽  
pp. 131-138 ◽  
Author(s):  
WENCHENG HU ◽  
CHUANREN YANG ◽  
WANLI ZHANG ◽  
YAN QIU ◽  
LIN ZHU
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering

Orientation Dependence of Strontium-doped Lead Zirconate Titanate (PSZT) Thin Films on RF Magnetron Sputtering Conditions

2006 ◽  
Vol 928 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Anthony Stephen Holland ◽  
Geoffrey K Reeves
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cooling Rate ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Orientation Dependence ◽  
Grain Structure ◽  
Zirconate Titanate

ABSTRACTStudies on strontium-doped lead zirconate titanate (PSZT) have been reported for its high piezoelectric and ferroelectric properties. For PSZT to exhibit pronounced piezoelectric behaviour it must have a crystalline grain structure (perovskite orientation). This paper is a study of the deposition of PSZT thin films by RF magnetron sputtering and the effect of cooling rate, after deposition at temperatures between 500 °C and 700 °C. X-Ray Diffraction (XRD) results are used to show how a cooling rate of 5 °C/min increases the degree of perovskite orientation in sputtered films, when compared to a cooling rate of 15 °C/min. The absence of significant shifts in the positions of diffraction peak patterns in XRD results are used to demonstrate low stress in the deposited films. Atomic Force Microscope (AFM) imaging is used to show the crystalline nature of the PSZT thin films.

Preparation and Ferroelectric Properties of Bi4-xErxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 232-235
Author(s):  
Jian Guo Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Property ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Random Orientation ◽  
Er Doping ◽  
Si Substrates ◽  
Remarkable Improvement

Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.

Preparation and Ferroelectric Properties of Bi4-xTmxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 41-44
Author(s):  
Bei Li ◽  
X.H. Yuan ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Tm2O3-doped bismuth titanate (Bi4-xTmxTi3O12, BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tm doping into BIT results in remarkable improvement in ferroelectric properties. The Pr and the Ec values of the BTT film with x=0.75 were 28 μC/cm2 and 80 kV/cm, respectively.

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