Effects of interfacial oxygen-deficient layer on resistance switching in Cr-doped SrTiO3 thin films

2008 ◽  
Vol 93 (22) ◽  
pp. 222906 ◽  
Author(s):  
Bach Thang Phan ◽  
Jaichan Lee
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Interfacial Oxygen

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Resistance switching in perovskite thin films

2006 ◽  
Vol 243 (9) ◽  
pp. 2089-2097 ◽  
Author(s):  
A. Ignatiev ◽  
N. J. Wu ◽  
X. Chen ◽  
S. Q. Liu ◽  
C. Papagianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Resistance switching in polycrystalline BiFeO3 thin films

2010 ◽  
Vol 97 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kuibo Yin ◽  
Mi Li ◽  
Yiwei Liu ◽  
Congli He ◽  
Fei Zhuge ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Bifeo3 Thin Films

Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films

2007 ◽  
Vol 51 (3) ◽  
pp. 1089 ◽  
Author(s):  
Mooyoung Kim ◽  
Hyungsang Kim ◽  
Yongmin Kim ◽  
Woong Jung ◽  
Hyunsik Im ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Resistance Switching

Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

2011 ◽  
Vol 519 (10) ◽  
pp. 3291-3294 ◽  
Author(s):  
Chang Hwa Jung ◽  
Seong Ihl Woo ◽  
Yun Seok Kim ◽  
Kwang Soo No
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Resistance Switching

Effect of Annealing Temperature on Resistance Switching Behavior of Bi4Ti3O12 Thin Films Deposited on ITO Glass

2013 ◽  
Vol 706-708 ◽  
pp. 82-84
Author(s):  
Bing Cheng Sun ◽  
Hua Wang ◽  
Ji Wen Xu
Keyword(s):  
Thin Films ◽  
High Resistance ◽  
Annealing Temperature ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Space Charge Limited Current ◽  
Ohmic Behavior ◽  
Conduction Mechanisms ◽  
Ito Glass ◽  
Solgel Method

Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by solgel method were studied, and the effect of annealing temperature on resistance switching behavior has been studied. The main point is accented on decrease the operation voltage. Two controllable resistance states were observed by applying voltage pulses. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Space Charge Limited Current(SCLC).

Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films

2012 ◽  
Vol 12 (3) ◽  
pp. 846-848 ◽  
Author(s):  
Moon Jee Yoon ◽  
Shin Buhm Lee ◽  
Hyang Keun Yoo ◽  
Soobin Sinn ◽  
Bo Soo Kang
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Resistance Switching ◽  
Forming Process
Sign in / Sign up

Export Citation Format

Share Document