Beam Angular Divergence Effects in Ion Implantation

2008 ◽  
Author(s):  
T. N. Horsky ◽  
M. I. Current ◽  
S. K. Hahto ◽  
D. G. Bilbrough ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Angular Divergence ◽  
Beam Angular Divergence

scholarly journals Measurements of the beam angular divergence at U-2 accelerator

2016 ◽  
Author(s):  
A. V. Arzhannikov ◽  
M. A. Makarov ◽  
D. A. Samtsov ◽  
S. L. Sinitsky ◽  
V. D. Stepanov
Keyword(s):  
Angular Divergence ◽  
Beam Angular Divergence

scholarly journals Erratum to: A Calculation Model of Beam Angular Divergence for EAST Neutral Beam Injector

2010 ◽  
Vol 30 (1) ◽  
pp. 99-99
Author(s):  
Yongjian Xu ◽  
Chundong Hu ◽  
Yuanlai Xie ◽  
Lizhen Liang ◽  
Jun Li ◽  
...  
Keyword(s):  
Calculation Model ◽  
Neutral Beam ◽  
Angular Divergence ◽  
Neutral Beam Injector ◽  
Beam Angular Divergence

High-power neutral-beam angular-divergence evaluation from spectrally resolved Doppler measurements

1981 ◽  
Vol 71 (11) ◽  
pp. 1318 ◽  
Author(s):  
G. Bracco ◽  
C. Breton ◽  
C. de Michelis ◽  
M. Mattioli ◽  
J. Ramette
Keyword(s):  
High Power ◽  
Neutral Beam ◽  
Angular Divergence ◽  
Beam Angular Divergence ◽  
Spectrally Resolved

A Calculation Model of Beam Angular Divergence for EAST Neutral Beam Injector

2010 ◽  
Vol 30 (1) ◽  
pp. 94-98 ◽  
Author(s):  
Yongjian Xu ◽  
Chundong Hu ◽  
Yuanlai Xie ◽  
Lizhen Liang ◽  
Jun Li ◽  
...  
Keyword(s):  
Calculation Model ◽  
Neutral Beam ◽  
Angular Divergence ◽  
Neutral Beam Injector ◽  
Beam Angular Divergence

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Sign in / Sign up

Export Citation Format

Share Document