Temperature-dependent photoluminescence and photoluminescence excitation of aluminum monodoped and aluminum-indium dual-doped ZnO nanorods

2008 ◽  
Vol 104 (11) ◽  
pp. 114307 ◽  
Author(s):  
Shisheng Lin ◽  
Haiping He ◽  
Zhizhen Ye ◽  
Binghui Zhao ◽  
Jingyun Huang
Keyword(s):  
Zno Nanorods ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

2013 ◽  
Vol 34 (11) ◽  
pp. 3335-3339 ◽  
Author(s):  
Soaram Kim ◽  
Hyunggil Park ◽  
Giwoong Nam ◽  
Hyunsik Yoon ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Temperature Dependent ◽  
Boron Doped ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods

2007 ◽  
Vol 90 (2) ◽  
pp. 023104 ◽  
Author(s):  
H. P. He ◽  
H. P. Tang ◽  
Z. Z. Ye ◽  
L. P. Zhu ◽  
B. H. Zhao ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Temperature Dependent ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

scholarly journals ZnAl2O4 decorated Al-doped ZnO tetrapodal 3D networks: microstructure, Raman and detailed temperature dependent photoluminescence analysis

2020 ◽  
Vol 2 (5) ◽  
pp. 2114-2126 ◽  
Author(s):  
Joana Rodrigues ◽  
Matthias Hoppe ◽  
Nabiha Ben Sedrine ◽  
Niklas Wolff ◽  
Viola Duppel ◽  
...  
Keyword(s):  
Peak Position ◽  
Temperature Dependent ◽  
Al Doping ◽  
3D Network ◽  
Doped Zno ◽  
3D Networks ◽  
Moss Effect ◽  
Temperature Dependent Photoluminescence

3D network of ZnO:Al tetrapods decorated with ZnAl2O4 particles were synthesised by FTS. Al-doping was confirmed by the broadening and shift of the peak position of the 14 K NBE emission and by the bandgap shift to higher energy due to a Burstein–Moss effect.

scholarly journals Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
C. Guénaud ◽  
E. Deleporte ◽  
M. Voos ◽  
C. Delalande ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Thin Layers ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Yellow Band ◽  
Neutral Donor ◽  
Photoluminescence Line ◽  
Temperature Dependent Photoluminescence

We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have been obtained. We show that, at low temperature, the fundamental A excitons are preferentially involved in the relaxation towards the neutral donor bound exciton photoluminescence line, while electron-hole pairs rather participate in the relaxation towards D0−A0 emission and the yellow band. The relaxation from the A exciton towards the yellow band and D0−A0 emission is made easier by temperature. The band structure of the GaN layers has been determined from temperature dependent photoluminescence excitation spectroscopy: A and C excitons and A continuum band gap have been identified up to 210K.

Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL02 ◽  
Author(s):  
Mark J. Holmes ◽  
Satoshi Kako ◽  
Kihyun Choi ◽  
Pawel Podemski ◽  
Munetaka Arita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-Dependent Photoluminescence of ZnO Nanorods Grown by a Copper-Assisted Hydrothermal Method

2015 ◽  
Vol 7 (9) ◽  
pp. 1800-1803 ◽  
Author(s):  
Xishun Jiang ◽  
Fengjiao Shang ◽  
Zhitao Zhou ◽  
Feng Wang ◽  
Changlong Liu ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Zno Nanorods ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence
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