Experimental Characterization Of The Asymmetry And The Dip Form Of The H[sub β]-Line Profiles In Microwave-Produced Plasmas At Atmospheric Pressure

2008 ◽  
Author(s):  
J. M. Palomares ◽  
J. Torres ◽  
M. A. Gigosos ◽  
J. J. A. M. van der Mullen ◽  
A. Gamero ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Line Profiles ◽  
Experimental Characterization ◽  
The Asymmetry

scholarly journals Experimental characterization of the Hβ-line profiles in microwave-produced plasmas at atmospheric pressure

2010 ◽  
Vol 207 ◽  
pp. 012013 ◽  
Author(s):  
J M Palomares ◽  
J Torres ◽  
M A Gigosos ◽  
J J A M van der Mullen ◽  
A Gamero ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Line Profiles ◽  
Experimental Characterization

Experimental Characterization of Flow Regimes for a Rotating Disc Over a Range of Gas Pressures

2013 ◽  
Author(s):  
Tathagata Acharya ◽  
Jordan Falgoust ◽  
Michael J. Martin ◽  
Richard E. Rasmussen
Keyword(s):  
Atmospheric Pressure ◽  
Ambient Pressure ◽  
Characteristic Dimension ◽  
Viscous Drag ◽  
Frictional Torque ◽  
Experimental Setup ◽  
Experimental Characterization ◽  
Rotating Disc ◽  
Gas Pressures

Experimental measurement of viscous drag is done on a rotating disc using a disc spin-down experiment in various air pressures ranging from atmospheric pressure through a vacuum pressure of 0.3 kPa. The torque is non-dimensionalized using the dynamic viscosity of air, angular velocity, and the characteristic dimension of the disc. The results can be classified as two different sets. Between atmospheric pressure and 13.3 kPa, the curves have a vertical downward trend and are connected to each other while at lower pressures the curves appear to be more horizontal. It is shown that the present experimental setup is an improvement over the old setup because the frictional torque associated with the experiment has been reduced by 25 % approximately, and the ambient pressure reached in the chamber is a fourth of the ultimate pressure reached before.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Experimental Characterization ◽  
Contact Lines ◽  
Tree Structures ◽  
Similar Test ◽  
Dual Damascene ◽  
Copper Interconnect ◽  
Test Conditions

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

Experimental Characterization of Mechanical Behavior of Cord-Rubber Composites

1982 ◽  
Vol 10 (1) ◽  
pp. 37-54 ◽  
Author(s):  
M. Kumar ◽  
C. W. Bert
Keyword(s):  
Response Characteristic ◽  
Cord Compression ◽  
Complete Characterization ◽  
Strain Response ◽  
Strain Gages ◽  
Experimental Characterization ◽  
Rubber Composites ◽  
Stress Strain ◽  
Strain Data

Abstract Unidirectional cord-rubber specimens in the form of tensile coupons and sandwich beams were used. Using specimens with the cords oriented at 0°, 45°, and 90° to the loading direction and appropriate data reduction, we were able to obtain complete characterization for the in-plane stress-strain response of single-ply, unidirectional cord-rubber composites. All strains were measured by means of liquid mercury strain gages, for which the nonlinear strain response characteristic was obtained by calibration. Stress-strain data were obtained for the cases of both cord tension and cord compression. Materials investigated were aramid-rubber, polyester-rubber, and steel-rubber.

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