scholarly journals Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

2008 ◽  
Vol 93 (17) ◽  
pp. 171113 ◽  
Author(s):  
Xianfeng Ni ◽  
Qian Fan ◽  
Ryoko Shimada ◽  
Ümit Özgür ◽  
Hadis Morkoç
2016 ◽  
Vol 30 (20) ◽  
pp. 1650221 ◽  
Author(s):  
Yang Huang ◽  
Zhiqiang Liu ◽  
Xiaoyan Yi ◽  
Yao Guo ◽  
Shaoteng Wu ◽  
...  

A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley–Read–Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common “[Formula: see text] model”, the “new model” is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.


2010 ◽  
Vol 97 (18) ◽  
pp. 181101 ◽  
Author(s):  
C. H. Wang ◽  
S. P. Chang ◽  
W. T. Chang ◽  
J. C. Li ◽  
Y. S. Lu ◽  
...  

2016 ◽  
Vol 213 (5) ◽  
pp. 1187-1192 ◽  
Author(s):  
Huimin Lu ◽  
Tongjun Yu ◽  
Yuebin Tao ◽  
Xingbin Li ◽  
Zhizhong Chen ◽  
...  

2013 ◽  
Vol 5 (2) ◽  
pp. 8200208-8200208 ◽  
Author(s):  
Li-Hong Zhu ◽  
Wei Liu ◽  
Fan-Ming Zeng ◽  
Yu-Lin Gao ◽  
Bao-Lin Liu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document