Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy

2008 ◽  
Vol 104 (7) ◽  
pp. 074510 ◽  
Author(s):  
Thomas Roth ◽  
Marc Rüdiger ◽  
Wilhelm Warta ◽  
Stefan W. Glunz
Keyword(s):  
Electronic Properties ◽  
Temperature Dependent ◽  
Boron Doped ◽  
Doped Silicon ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

2013 ◽  
Vol 34 (11) ◽  
pp. 3335-3339 ◽  
Author(s):  
Soaram Kim ◽  
Hyunggil Park ◽  
Giwoong Nam ◽  
Hyunsik Yoon ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Temperature Dependent ◽  
Boron Doped ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

Structures, stabilities and electronic properties of boron-doped silicon clusters B3Sin (n=1–17) and their anions

2018 ◽  
Vol 117 (4) ◽  
pp. 382-394 ◽  
Author(s):  
Cheng-Gang Li ◽  
Jin-Hai Gao ◽  
Jie Zhang ◽  
Wan-Ting Song ◽  
Shui-Qing Liu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Clusters ◽  
Boron Doped ◽  
Doped Silicon

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

2007 ◽  
Vol 102 (10) ◽  
pp. 103716 ◽  
Author(s):  
T. Roth ◽  
P. Rosenits ◽  
S. Diez ◽  
S. W. Glunz ◽  
D. Macdonald ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Boron Doped ◽  
Doped Silicon ◽  
Pairing Behavior

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from MEH-PPV and MEH-OPPV containing oxadiazole in the main chain

2006 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
F. Kong ◽  
X.L. Wu ◽  
G.S. Huang ◽  
R.K. Yuan ◽  
C.Z. Yang ◽  
...  
Keyword(s):  
Main Chain ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Synthesis, characterization, and temperature-dependent electronic properties of ZnO nanorods using CBD techniques

2021 ◽  
Author(s):  
C. A. Ruiz-Rojas ◽  
M. Aguilar-Frutis ◽  
F. Ramos-Brito ◽  
I. A. Garduño-Wilches ◽  
J. Narro-Ríos ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Zno Nanorods ◽  
Temperature Dependent

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling
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