scholarly journals Improvement and protection of niobium surface superconductivity by atomic layer deposition and heat treatment

2008 ◽  
Vol 93 (19) ◽  
pp. 192504 ◽  
Author(s):  
T. Proslier ◽  
J. Zasadzinski ◽  
J. Moore ◽  
M. Pellin ◽  
J. Elam ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Superconductivity ◽  
Layer Deposition

Atomic Layer Deposition of Cu2SnS3 Thin Films: Effects of Composition and Heat Treatment on Phase Transformation

2021 ◽  
Author(s):  
Raphael Edem Agbenyeke ◽  
Soomin Song ◽  
Heenang Choi ◽  
Bo Keun Park ◽  
Jae Ho Yun ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Effect of heat-treatment on the performance of gas barrier layers applied by atomic layer deposition onto polymer-coated paperboard

2011 ◽  
Vol 122 (4) ◽  
pp. 2221-2227 ◽  
Author(s):  
Terhi Hirvikorpi ◽  
Mika Vähä-Nissi ◽  
Jari Vartiainen ◽  
Paavo Penttilä ◽  
Juha Nikkola ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gas Barrier ◽  
Barrier Layers ◽  
Layer Deposition

Physical and Electrical Properties of Al2O3, HfO2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

2002 ◽  
Vol 745 ◽  
Author(s):  
Takaaki Kawahara ◽  
Kazuyoshi Torii ◽  
Seiichi Fukuda ◽  
Takeshi Maeda ◽  
Atsushi Horiuchi ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Phase Separation ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Crystallization Temperature ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Dielectric Constants ◽  
Alloy Films ◽  
Layer Deposition

ABSTRACTWe have investigated physical and electrical properties of Al2O3, HfO2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al2O3 films are not crystallized even after the heat treatment of 1050°C, while HfO2 films are already crystallized even after a-Si deposition (530°C). The crystallization temperature can be higher by adding Al2O3 to HfO2. It is confirmed by in-plane XRD and plane views of TEM that HfAlOx films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050°C and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al2O3, HfAlOx (Hf/(Hf+Al)∼22%), and HfO2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ∼9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density Jg of 3mA/cm2 can be fabricated with 2nm-thick HfAlOx (22%) film.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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