Optical transitions and the mobility edge in amorphous semiconductors: A joint density of states analysis

2008 ◽  
Vol 104 (7) ◽  
pp. 073513 ◽  
Author(s):  
Farida Orapunt ◽  
Stephen K. O’Leary
Keyword(s):  
Density Of States ◽  
Amorphous Semiconductors ◽  
Joint Density ◽  
Optical Transitions ◽  
Mobility Edge

MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

2019 ◽  
pp. 104-115
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Mathematical Modeling ◽  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Landau Levels ◽  
Joint Density ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Dispersion Law ◽  
The Magnetic Field

The article considers the oscillations of interband magneto-optical absorption in semiconductors with the Kane dispersion law. We have compared the changes in oscillations of the joint density of states with respect to the photon energy for different Landau levels in parabolic and non-parabolic zones. An analytical expression is obtained for the oscillation of the combined density of states in narrow-gap semiconductors. We have calculated the dependence of the maximum photon energy on the magnetic field at different temperatures. A theoretical study of the band structure showed that the magnetoabsorption oscillations decrease with an increase in temperature, and the photon energies nonlinearly depend on a strong magnetic field. The article proposes a simple method for calculating the oscillation of joint density of states in a quantizing magnetic field with the non-quadratic dispersion law. The temperature dependence of the oscillations joint density of states in semiconductors with non-parabolic dispersion law is obtained. Moreover, the article studies the temperature dependence of the band gap in a strong magnetic field with the non-quadratic dispersion law. The method is applied to the research of the magnetic absorption in narrow-gap semiconductors with nonparabolic dispersion law. It is shown that as the temperature increases, Landau levels are washed away due to thermal broadening and density of states turns into a density of states without a magnetic field. Using the mathematical model, the temperature dependence of the density distribution of energy states in strong magnetic fields is considered. It is shown that the continuous spectrum of the density of states, measured at the temperature of liquid nitrogen, at low temperatures turns into discrete Landau levels. Mathematical modeling of processes using experimental values of the continuous spectrum of the density of states makes it possible to calculate discrete Landau levels. We have created the three-dimensional fan chart of magneto optical oscillations of semiconductors with considering for the joint density of energy states. For a nonquadratic dispersion law, the maximum frequency of the absorbed light and the width of the forbidden band are shown to depend nonlinearly on the magnetic field. Modeling the temperature  dependence allowed us to determine the Landau levels in semiconductors in a wide temperature spectrum. Using the proposed model, the experimental results obtained for narrow-gap semiconductors are analyzed. The theoretical results are compared with experimental results.

Effect of quantum dot shape dispersion on their joint density of states

2011 ◽  
Vol 37 (5) ◽  
pp. 431-434
Author(s):  
A. E. Krasnok ◽  
V. P. Dzyuba ◽  
Yu. N. Kul’chin
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Joint Density

Uphill and downhill charge generation from charge transfer to charge separated states in organic solar cells

2021 ◽  
Author(s):  
Shahidul Alam ◽  
Vojtech Nádaždy ◽  
Tomáš Váry ◽  
Christian Friebe ◽  
Rico Meitzner ◽  
...  
Keyword(s):  
Cyclic Voltammetry ◽  
Solar Cells ◽  
Charge Transfer ◽  
Energy Level ◽  
Density Of States ◽  
Organic Solar Cells ◽  
Joint Density ◽  
Charge Generation ◽  
Donor Acceptor

Energy level alignments at the organic donor–acceptor interface cannot be predicted from cyclic voltammetry. Onsets for joint density of states and charge generation, reveal cases of energy uphill and – newly observed – downhill charge generation.

Joint density of states in low dimensional semiconductors

2016 ◽  
Vol 76 ◽  
pp. 103-108 ◽  
Author(s):  
C.I. Cabrera ◽  
D.A. Contreras-Solorio ◽  
L. Hernández
Keyword(s):  
Density Of States ◽  
Joint Density ◽  
Low Dimensional

scholarly journals The parallel Wang-Landau algorithm for joint density of states calculation

2018 ◽  
Vol 1141 ◽  
pp. 012068
Author(s):  
V I Egorov ◽  
O G Maksimova ◽  
A R Baidganov
Keyword(s):  
Density Of States ◽  
Joint Density

Urbach energy and the tails of the density of states in amorphous semiconductors

2011 ◽  
Vol 78 (2) ◽  
pp. 223-227 ◽  
Author(s):  
S. Zaynobidinov ◽  
R. G. Ikramov ◽  
R. M. Jalalov
Keyword(s):  
Density Of States ◽  
Urbach Energy ◽  
Amorphous Semiconductors

Optical transitions involving deep levels in amorphous semiconductors

1987 ◽  
Vol 97-98 ◽  
pp. 527-530
Author(s):  
L.A. Balagurov ◽  
E.M. Omeljanovsky ◽  
A.G. Petukhov ◽  
M.N. Starikov ◽  
M.G. Foigel
Keyword(s):  
Deep Levels ◽  
Amorphous Semiconductors ◽  
Optical Transitions
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