Magnetic properties of diluted magnetic semiconductor nanowires CoxSn1−xO2

2008 ◽  
Vol 104 (6) ◽  
pp. 063906 ◽  
Author(s):  
Ge Shihui ◽  
Yin Jinglei ◽  
Zhang Huaxin
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanowires ◽  
Diluted Magnetic

Electronic and magnetic properties of the diluted magnetic semiconductor Hg1-xMnxTe1-ySey

1995 ◽  
Vol 10 (4) ◽  
pp. 463-468 ◽  
Author(s):  
V A Kulbachinskii ◽  
P D Maryanchuk ◽  
I A Churilov ◽  
M Inoue ◽  
M Sasaki ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electronic And Magnetic Properties ◽  
Diluted Magnetic

Carrier-Concentration-Dependent Magnetic Properties of the Diluted Magnetic Semiconductor SnMnte

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Critical Concentration ◽  
Magnetic Semiconductor ◽  
Magnetic Phases ◽  
Diluted Magnetic ◽  
Ferromagnetic Interactions

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.

Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films

2012 ◽  
Vol 33 (4) ◽  
pp. 417-421
Author(s):  
叶展通 YE Zhan-tong ◽  
朱德亮 ZHU De-liang ◽  
马晓翠 MA Xiao-cui ◽  
吕有明 LV You-ming ◽  
柳文军 LIU Wen-jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Structural And Magnetic Properties ◽  
Diluted Magnetic

Influence of Cr concentration on the structural and magnetic properties of the diluted magnetic semiconductor Hg1−xCrxSe

2002 ◽  
Vol 28 (12) ◽  
pp. 880-882 ◽  
Author(s):  
V. D. Prozorovskiı̆ ◽  
I. Yu. Reshidova ◽  
A. I. Puzynya ◽  
S. Yu. Paranchych ◽  
V. R. Romanyuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Structural And Magnetic Properties ◽  
Diluted Magnetic ◽  
Cr Concentration

Structural Characterization, and Magnetic Morphological Study of Ni+2 Doped ZnO Synthesized by Combustion Reaction Application for DMS

2012 ◽  
Vol 727-728 ◽  
pp. 511-515 ◽  
Author(s):  
R. Torquato ◽  
E. Shirsath Sagar ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
Ana Cristina Figueiredo de Melo Costa
Keyword(s):  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
Combustion Reaction ◽  
Second Phase ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Maximum Temperatures

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.

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