Investigation of substrate-induced strain effects in La0.7Ca0.15Sr0.15MnO3 thin films using ferroelectric polarization and the converse piezoelectric effect

2008 ◽  
Vol 93 (10) ◽  
pp. 102904 ◽  
Author(s):  
R. K. Zheng ◽  
Y. Jiang ◽  
Y. Wang ◽  
H. L. W. Chan ◽  
C. L. Choy ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Effect ◽  
Ferroelectric Polarization ◽  
Strain Effects ◽  
Converse Piezoelectric Effect

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

Strain effects on the ESR spectra of Au:Yb thin films alloys

1980 ◽  
Vol 15-18 ◽  
pp. 1112-1114 ◽  
Author(s):  
F.G. Gandra ◽  
C.A. Pela ◽  
G.E. Barberis ◽  
D. Davidov ◽  
C. Rettori
Keyword(s):  
Thin Films ◽  
Esr Spectra ◽  
Strain Effects

scholarly journals Enhanced ferroelectric polarization in epitaxial (Pb1−xLax)(Zr0.52Ti0.48)O3 thin films due to low La doping

2017 ◽  
Vol 95 (17) ◽  
Author(s):  
Devajyoti Mukherjee ◽  
Mahesh Hordagoda ◽  
David Pesquera ◽  
Dipankar Ghosh ◽  
Jacob L. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
La Doping

Structural dynamics of PZT thin films at the nanoscale

2005 ◽  
Vol 902 ◽  
Author(s):  
Alexei Grigoriev ◽  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Bernhard Adams ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Lattice Distortion ◽  
Piezoelectric Effect ◽  
Polarization Switching ◽  
X Rays ◽  
Time Resolved ◽  
X Ray ◽  
Converse Piezoelectric Effect ◽  
Ferroelectric Capacitors ◽  
Crystal Lattice Distortion

AbstractWhen an electric field is applied to a ferroelectric the crystal lattice spacing changes as a result of the converse piezoelectric effect. Although the piezoelectric effect and polarization switching have been investigated for decades there has been no direct nanosecond-scale visualization of these phenomena in solid crystalline ferroelectrics. Synchrotron x-rays allow the polarization switching and the crystal lattice distortion to be visualized in space and time on scales of hundreds of nanometers and hundreds of picoseconds using ultrafast x-ray microdiffraction. Here we report the polarization switching visualization and polarization domain wall velocities for Pb(Zr0.45Ti0.55)O3 thin film ferroelectric capacitors studied by time-resolved x-ray microdiffraction.

The Displacement Characteristics of Piezoelectric Ceramic Micro Actuators Evaluated by Laser Interferometer

2015 ◽  
Vol 645-646 ◽  
pp. 920-925 ◽  
Author(s):  
Hong Wu ◽  
Long Biao He ◽  
Jing Lin Zhou ◽  
Ping Yang
Keyword(s):  
Piezoelectric Ceramic ◽  
Piezoelectric Coefficient ◽  
Laser Interferometer ◽  
Piezoelectric Effect ◽  
Influence Factors ◽  
Energy Transformation ◽  
Measurement Results ◽  
Loading Sequence ◽  
Converse Piezoelectric Effect ◽  
Key Parameter

Understanding and measuring the displacement characteristics of piezoelectric ceramic with electric field exciting are particularly important. The piezoelectric coefficient d33 as the indication of its displacement characteristics, is the key parameter of its energy transformation. In this paper, the characteristics of two kinds of piezoelectric ceramics, PZT4 and PZT5 were studied by the laser interferometer measurement. The influence factors of d33 were studied, including the frequency and amplitude of the exciting signal, the ways of holding, and the loading sequence. Then the measurement results of piezoelectric ceramic with laser interferometer and the quasi-static method were compared, the results showed they had consistence and the analysis of the piezoelectric coefficient d33 measurement by converse piezoelectric effect and by piezoelectric effect was discussed.

scholarly journals Interaction between Ferroelectric Polarization and Defects in BiFeO3 Thin Films

2017 ◽  
Vol 23 (S1) ◽  
pp. 1604-1605
Author(s):  
Lin-Ze Li ◽  
Lin Xie ◽  
Yi Zhang ◽  
Xiaoxing Cheng ◽  
Zijian Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
Bifeo3 Thin Films
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