Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces with time-resolved electric-field-induced second harmonic generation

2008 ◽  
Vol 93 (13) ◽  
pp. 131106 ◽  
Author(s):  
Y.-M. Chang ◽  
Y.-L. Hong ◽  
S. Gwo
2016 ◽  
Vol 16 (4) ◽  
pp. 3188-3193
Author(s):  
Yoshiaki Oda ◽  
Atsuo Sadakata ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto

By using I–V, EL–V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and -NPD layers in ITO/-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I–V and EL–V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the -NPD and Alq3 layers, which resulted in the relaxation of electric field of -NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I–V and EL–V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.


1995 ◽  
Vol 336 (1-2) ◽  
pp. 225-231 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.V. Melnikov ◽  
T.V. Murzina ◽  
A.A. Nikulin ◽  
A.N. Rubtsov

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