High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice
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2014 ◽
Vol 29
(8)
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pp. 084005
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2001 ◽
Vol 40
(Part 2, No. 6B)
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pp. L583-L585
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2001 ◽
Vol 188
(1)
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pp. 121-125
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2004 ◽
Vol 43
(9A)
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pp. 5945-5950
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2020 ◽
Vol 67
(9)
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pp. 3650-3654
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