Effect of atomic hydrogen on boron-doped germanium: An ab initio study

2008 ◽  
Vol 93 (8) ◽  
pp. 082107 ◽  
Author(s):  
R. Q. Wu ◽  
M. Yang ◽  
Y. P. Feng ◽  
Y. F. Ouyang
2008 ◽  
Vol 139 ◽  
pp. 23-28 ◽  
Author(s):  
Simone Giusepponi ◽  
Massimo Celino ◽  
Fabrizio Cleri ◽  
Amelia Montone

We studied the atomic-level structure of a model Mg-MgH2 interface by means of the Car-Parrinello molecular dynamics method (CPMD). The interface was characterized in terms of total energy calculations, and an estimate of the work of adhesion was given, in good agreement with experimental results on similar systems. Furthermore, the interface was studied in a range of temperatures of interest for the desorption of hydrogen. We determined the diffusivity of atomic hydrogen as a function of the temperature, and give an estimate of the desorption temperature.


ChemPhysChem ◽  
2011 ◽  
Vol 12 (7) ◽  
pp. 1358-1366 ◽  
Author(s):  
Julia Saloni ◽  
Paweł Kadłubański ◽  
Szczepan Roszak ◽  
D. Majumdar ◽  
Glake Hill ◽  
...  

Author(s):  
Le The Anh ◽  
Francesca Celine I. Catalan ◽  
Yousoo Kim ◽  
Yasuaki Einaga ◽  
Yoshitaka Tateyama

Dependence of DOS on the boron's positions on a diamond(111) surface. In the bulk, boron interacts with carbon sp3 and shows p-type characters. On the surface, boron strongly interacts with carbon sp2 and exhibits surface states in the midgap.


2018 ◽  
Vol 20 (27) ◽  
pp. 18556-18570 ◽  
Author(s):  
Emmanuel N. Koukaras

Structures and detailed properties of medium sized boron-doped silicon clusters.


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