Thermomagnetic instability and features of the dynamic response of superconducting films

2008 ◽  
Vol 34 (9) ◽  
pp. 729-733
Author(s):  
Yu. E. Kuzovlev ◽  
Yu. V. Medvedev
2013 ◽  
Vol 173 (5-6) ◽  
pp. 303-326 ◽  
Author(s):  
J. I. Vestgården ◽  
Y. M. Galperin ◽  
T. H. Johansen

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1322-1324 ◽  
Author(s):  
S. Okuma ◽  
Y. Suzuki ◽  
Y. Yamazaki ◽  
N. Kokubo

2016 ◽  
Vol 93 (17) ◽  
Author(s):  
J. I. Vestgården ◽  
Y. M. Galperin ◽  
T. H. Johansen

Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


Author(s):  
Edward Seckel ◽  
Ian A. M. Hall ◽  
Duane T. McRuer ◽  
David H. Weir
Keyword(s):  

1991 ◽  
Vol 1 (1) ◽  
pp. 63-77 ◽  
Author(s):  
M. Nifle ◽  
H. J. Hilhorst

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