Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach

2008 ◽  
Vol 93 (10) ◽  
pp. 102104 ◽  
Author(s):  
K. Ramspeck ◽  
S. Reissenweber ◽  
J. Schmidt ◽  
K. Bothe ◽  
R. Brendel
Keyword(s):  
Carrier Lifetime ◽  
Infrared Camera ◽  
Silicon Wafers ◽  
Lifetime Imaging

Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers

2009 ◽  
Vol 106 (11) ◽  
pp. 114506 ◽  
Author(s):  
Klaus Ramspeck ◽  
Karsten Bothe ◽  
Jan Schmidt ◽  
Rolf Brendel
Keyword(s):  
Steady State ◽  
Carrier Lifetime ◽  
Infrared Camera ◽  
Silicon Wafers ◽  
Lifetime Imaging

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Carrier Lifetime and Material Study in Intrinsically Gettered Silicon Wafers for High Precipitate Density

1991 ◽  
Vol 125 (1) ◽  
pp. 133-141 ◽  
Author(s):  
V. Grivickas ◽  
V. Bikbayev ◽  
J. Šečkus ◽  
A. Vigelis ◽  
L. Frank
Keyword(s):  
Carrier Lifetime ◽  
Silicon Wafers ◽  
Precipitate Density ◽  
Material Study

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

2010 ◽  
Vol 97 (9) ◽  
pp. 092109 ◽  
Author(s):  
J. A. Giesecke ◽  
M. C. Schubert ◽  
D. Walter ◽  
W. Warta
Keyword(s):  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Quasi Steady State

An rf bridge technique for contactless measurement of the carrier lifetime in silicon wafers

1983 ◽  
Vol 54 (5) ◽  
pp. 2499-2503 ◽  
Author(s):  
T. Tiedje ◽  
J. I. Haberman ◽  
R. W. Francis ◽  
A. K. Ghosh
Keyword(s):  
Carrier Lifetime ◽  
Silicon Wafers ◽  
Contactless Measurement
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