Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors

2008 ◽  
Vol 93 (8) ◽  
pp. 083105 ◽  
Author(s):  
Koshi Okamura ◽  
Norman Mechau ◽  
Donna Nikolova ◽  
Horst Hahn
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Roughness

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG09 ◽  
Author(s):  
Yoshinobu Asami ◽  
Motomu Kurata ◽  
Yutaka Okazaki ◽  
Eiji Higa ◽  
Daisuke Matsubayashi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

Hydrothermally Synthesized Ultrathin Zinc Oxide Nanowires Based Field-Effect Transistors

2016 ◽  
Vol 618 ◽  
pp. 100-106 ◽  
Author(s):  
Guan-Hung Shen ◽  
Andrew Ronaldi Tandio ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zinc Oxide Nanowires ◽  
Oxide Nanowires

Zinc oxide sheet field-effect transistors

2015 ◽  
Vol 107 (3) ◽  
pp. 033105 ◽  
Author(s):  
A. S. Dahiya ◽  
C. Opoku ◽  
C. Oshman ◽  
G. Poulin-Vittrant ◽  
F. Cayrel ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors

Doping-Dependent Nonlinear Electron Mobility in GaAs|In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As Coupled Quantum-Well Pseudo-Morphic MODFET Structure

2020 ◽  
Vol 54 (7) ◽  
pp. 676
Author(s):  
S.R. Panda ◽  
A. Sahu ◽  
S. Das ◽  
A.K. Panda ◽  
T. Sahu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Interface Roughness ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Alloy Disorder

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of GaAs|InxGa1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate μ for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as Nd1 and Nd2, respectively, we show that variation of Nd1 leads to a dip in μ near Nd1=Nd2, at which the resonance of the sub-band states occurs. A similar dip in μ as a function of Nd1 is also obtained at Nd1=Nd2 by keeping (Nd1+Nd2) unchanged. By increasing the central barrier width and well width, the dip in μ becomes sharp. We note that even though the overall μ is governed by the IMP- and AL-scatterings, the dip in μ is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|InxGa1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors

2012 ◽  
Vol 23 (14) ◽  
pp. 1750-1758 ◽  
Author(s):  
Babak Nasr ◽  
Di Wang ◽  
Robert Kruk ◽  
Harald Rösner ◽  
Horst Hahn ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Speed ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Stable Operation ◽  
Zinc Oxide Nanowire

scholarly journals Low-Power Flexible Organic Field-Effect Transistors with Solution-Processable Polymer-Ceramic Nanoparticle Composite Dielectrics

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 518 ◽  
Author(s):  
Xiong Chen ◽  
Hao Zhang ◽  
Yu Zhang ◽  
Xiangfeng Guan ◽  
Zitong Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Dielectric Surface ◽  
Calcium Titanate ◽  
Interface Roughness ◽  
Water Contact ◽  
Force Microscopy ◽  
Vinyl Phenol

Polymer-ceramic dielectric composites have been of great interest because they combine the processability of polymers with the desired dielectric properties of the ceramics. We fabricated a low voltage-operated flexible organic field-effect transistor (OFET) based on crosslinked poly (4-vinyl phenol) (PVP) polymer blended with novel ceramic calcium titanate nanoparticles (CaTiO3 NPs) as gate dielectric. To reduce interface roughness caused by nanoparticles, it was further coated with a very thin PVP film. The resulting OFET exhibited much lower operated voltage (reducing from –10.5 V to –2.9 V), a relatively steeper threshold slope (~0.8 V/dec) than those containing a pure PVP dielectric. This is ascribed to the high capacitance of the CaTiO3 NP-filled PVP insulator, and its smoother and hydrophobic dielectric surface proved by atomic force microscopy (AFM) and a water contact angle test. We also evaluated the transistor properties in a compressed state. The corresponding device had no significant degradation in performance when bending at various diameters. In particular, it operated well continuously for 120 hours during a constant bending stress. We believe that this technology will be instrumental in the development of future flexible and printed electronic applications.

scholarly journals Nanocomposite Field Effect Transistors based on Zinc oxide/polymer blends

2007 ◽  
Author(s):  
Vellaisamy A. L. Roy ◽  
Zong-Xiang Xu ◽  
Peter Stallinga ◽  
Hai-Feng Xiang ◽  
Beiping Yan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Polymer Blends ◽  
Field Effect ◽  
Field Effect Transistors
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