Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method

2008 ◽  
Vol 93 (7) ◽  
pp. 072101 ◽  
Author(s):  
Woo-Byoung Kim ◽  
Asuha ◽  
Taketoshi Matsumoto ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Sio2 Layer ◽  
Acid Oxidation ◽  
Electrical Characteristics ◽  
Oxidation Method ◽  
Nitric Acid Oxidation ◽  
Atomically Flat

Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics

2004 ◽  
Vol 85 (17) ◽  
pp. 3783-3785 ◽  
Author(s):  
Asuha ◽  
Shigeki Imai ◽  
Masao Takahashi ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Acid Oxidation ◽  
Electrical Characteristics ◽  
Nitric Acid Oxidation

Improvement of Minority Carrier Lifetime and Si Solar Cell Characteristics by Nitric Acid Oxidation Method

2014 ◽  
Vol 3 (7) ◽  
pp. Q137-Q141 ◽  
Author(s):  
Fumio Shibata ◽  
Daisuke Ishibashi ◽  
Shoji Ogawara ◽  
Taketoshi Matsumoto ◽  
Chang-Ho Kim ◽  
...  
Keyword(s):  
Solar Cell ◽  
Nitric Acid ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Si Solar Cell ◽  
Nitric Acid Oxidation

Ultralow-Power TFT With Gate Oxide Fabricated by Nitric Acid Oxidation Method

2010 ◽  
Vol 31 (8) ◽  
pp. 821-823 ◽  
Author(s):  
Taketoshi Matsumoto ◽  
Yasushi Kubota ◽  
Mikihiro Yamada ◽  
Hiroshi Tsuji ◽  
Takafumi Shimatani ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Gate Oxide ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Ultralow Power ◽  
Nitric Acid Oxidation

Formation of atomically smooth SiO2/SiC interfaces at ∼120°C by use of nitric acid oxidation method

2006 ◽  
Vol 600 (3) ◽  
pp. 547-550 ◽  
Author(s):  
Shigeki Imai ◽  
Masayuki Fujimoto ◽  
Asuha ◽  
Masao Takahashi ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Nitric Acid Oxidation

Nitric Acid Oxidation Method to Form a Gate Oxide Layer in Sub-Micrometer TFT

2019 ◽  
Vol 35 (4) ◽  
pp. 217-227 ◽  
Author(s):  
Taketoshi Matsumoto ◽  
Yasushi Kubota ◽  
Shigeki Imai ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Oxide Layer ◽  
Gate Oxide ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Nitric Acid Oxidation

Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

2008 ◽  
Vol 254 (12) ◽  
pp. 3667-3671 ◽  
Author(s):  
Sung-Soon Im ◽  
Sumio Terakawa ◽  
Hitoo Iwasa ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Nitric Acid Oxidation

Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method

2008 ◽  
Vol 254 (24) ◽  
pp. 8054-8058 ◽  
Author(s):  
S. Imai ◽  
S. Mizushima ◽  
Asuha ◽  
W.-B. Kim ◽  
H. Kobayashi
Keyword(s):  
Nitric Acid ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Nitric Acid Oxidation
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