Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes

2008 ◽  
Vol 104 (3) ◽  
pp. 036106 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Yong-Tak Lee ◽  
Jongwoon Park
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electronic And Optical Properties

Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

2009 ◽  
Vol 206 (11) ◽  
pp. 2637-2640 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn ◽  
Bun-Hei Koo ◽  
Jong-Wook Kim
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electronic And Optical Properties

Structural, electronic, and optical properties of phenol-pyridyl boron complexes for light-emitting diodes

2009 ◽  
Vol 109 (7) ◽  
pp. 1419-1429 ◽  
Author(s):  
Lu-Yi Zou ◽  
Ai-Min Ren ◽  
Ji-Kang Feng ◽  
Xue-Qin Ran ◽  
Yan-Ling Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electronic And Optical Properties ◽  
Boron Complexes

Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
J.F. Schetzina
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Film Growth ◽  
Laser Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Buffer Layers ◽  
Light Emitting ◽  
Quantum Well Structures

ABSTRACTGrowth of lll-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an rf nitrogen plasma source. GaN/SiC substrates consisting of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by MOVPE at Cree Research, Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties — comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, x-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. AlxGa1−xN films (x∼0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes (LEDs) based on double-heterostructures of AlxGa1−xN/GaN which emit violet light at ∼400 nm have also been demonstrated. Key issues that must be addressed before lll-V nitride laser diodes can be demonstrated and commercialized are discussed. New integrated heterostructures are proposed for the development of a variety of vertical-transport devices such as light-emitting diodes, laser diodes, photocathodes, electron emitters based on the negative-electron-affinity of AIN, and certain transistor structures.

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