Analysis of terahertz pulses from large-aperture biased semi-insulating and arsenic-ion-implanted GaAs antennas

2008 ◽  
Vol 104 (5) ◽  
pp. 053121 ◽  
Author(s):  
Rone-Hwa Chou ◽  
Tze-An Liu ◽  
Ci-Ling Pan
Keyword(s):  
Large Aperture ◽  
Terahertz Pulses ◽  
Ion Implanted

Near-field propagation of terahertz pulses from a large-aperture antenna

1998 ◽  
Vol 23 (3) ◽  
pp. 213 ◽  
Author(s):  
Edward Budiarto ◽  
Nen-Wen Pu ◽  
Seongtae Jeong ◽  
Jeffrey Bokor
Keyword(s):  
Near Field ◽  
Aperture Antenna ◽  
Large Aperture ◽  
Terahertz Pulses

Time-Resolved Study of Intense Terahertz Pulses Generated by a Large-Aperture Photoconductive Antenna

2001 ◽  
Vol 40 (Part 1, No. 8) ◽  
pp. 4907-4912 ◽  
Author(s):  
Toshiaki Hattori ◽  
Keiji Tukamoto ◽  
Hiroki Nakatsuka
Keyword(s):  
Photoconductive Antenna ◽  
Time Resolved ◽  
Large Aperture ◽  
Terahertz Pulses

Intense Terahertz Pulses from Large-Aperture Antenna with Interdigitated Electrodes

2006 ◽  
Vol 45 (No. 15) ◽  
pp. L422-L424 ◽  
Author(s):  
Toshiaki Hattori ◽  
Kazuhiro Egawa ◽  
Shin-ichi Ookuma ◽  
Taro Itatani
Keyword(s):  
Aperture Antenna ◽  
Interdigitated Electrodes ◽  
Large Aperture ◽  
Terahertz Pulses

scholarly journals Generation of 1.5 µJ single-cycle terahertz pulses by optical rectification from a large aperture ZnTe crystal

2007 ◽  
Vol 15 (20) ◽  
pp. 13212 ◽  
Author(s):  
F. Blanchard ◽  
L. Razzari ◽  
H.C. Bandulet ◽  
G. Sharma ◽  
R. Morandotti ◽  
...  
Keyword(s):  
Optical Rectification ◽  
Single Cycle ◽  
Large Aperture ◽  
Znte Crystal ◽  
Terahertz Pulses

Generation of Elliptically Polarized Half-Cycle Terahertz Pulses Generated by 6H-SiC Large Aperture Photoconductive Antenna

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
X. Ropagnol ◽  
N. Ranjkesh ◽  
S. M. Raeis-Zadeh ◽  
S. Safavi-Naeini ◽  
M. Bouvier ◽  
...  
Keyword(s):  
Half Cycle ◽  
Photoconductive Antenna ◽  
Large Aperture ◽  
Terahertz Pulses ◽  
Elliptically Polarized

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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