High-density magnetohydrodynamic energy conversion in a high-temperature inert gas

2008 ◽  
Vol 93 (4) ◽  
pp. 041504 ◽  
Author(s):  
Tomoyuki Murakami ◽  
Yoshihiro Okuno
Keyword(s):  
High Temperature ◽  
Energy Conversion ◽  
High Density ◽  
Inert Gas

High-temperature inert gas plasma magnetohydrodynamic energy conversion by using linear-shaped Faraday-type channel

2013 ◽  
Vol 113 (6) ◽  
pp. 063303 ◽  
Author(s):  
Tomoyuki Murakami ◽  
Yunqin Zhuang ◽  
Yoshihiro Okuno
Keyword(s):  
High Temperature ◽  
Energy Conversion ◽  
Inert Gas ◽  
Gas Plasma

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

scholarly journals High-density Néel-type magnetic skyrmion phase stabilized at high temperature

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Hee Young Kwon ◽  
Kyung Mee Song ◽  
Juyoung Jeong ◽  
Ah-Yeon Lee ◽  
Seung-Young Park ◽  
...  
Keyword(s):  
High Temperature ◽  
High Density ◽  
Low Density ◽  
Memory Devices ◽  
Magnetic Multilayer ◽  
Multilayer Systems ◽  
Micromagnetic Simulations ◽  
Transmission Electron ◽  
Ultrahigh Density ◽  
Lorentz Transmission Electron Microscopy

AbstractThe discovery of a thermally stable, high-density magnetic skyrmion phase is a key prerequisite for realizing practical skyrmionic memory devices. In contrast to the typical low-density Néel-type skyrmions observed in technologically viable multilayer systems, with Lorentz transmission electron microscopy, we report the discovery of a high-density homochiral Néel-type skyrmion phase in magnetic multilayer structures that is stable at high temperatures up to 733 K (≈460 °C). Micromagnetic simulations reveal that a high-density skyrmion phase can be stabilized at high temperature by deliberately tuning the magnetic anisotropy, magnetic field, and temperature. The existence of the high-density skyrmion phase in a magnetic multilayer system raises the possibility of incorporating chiral Néel-type skyrmions in ultrahigh-density spin memory devices. Moreover, the existence of this phase at high temperature shows its thermal stability, demonstrating the potential for skyrmion devices operating in thermally challenging modern electronic chips.

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