High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

2008 ◽  
Vol 93 (4) ◽  
pp. 043511 ◽  
Author(s):  
Li-Hsien Huang ◽  
Su-Hao Yeh ◽  
Ching-Ting Lee
Keyword(s):  
High Frequency ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Photoelectrochemical Oxidation

scholarly journals Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1494
Author(s):  
Jhang-Jie Jian ◽  
Hsin-Ying Lee ◽  
Edward-Yi Chang ◽  
Ching-Ting Lee
Keyword(s):  
Performance Metrics ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Positive Voltage ◽  
Gate Control ◽  
Source Current

In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi-mesa-channel could enhance gate control capabilities and reduce the self-heating effect in the channel, the performance of the MOSHEMTs could be obviously improved. The direct current performance metrics of the multi-mesa-channel-structured MOSHEMTs, such as a saturation drain-source current of 929 mA/mm, maximum extrinsic transconductance of 223 mS/mm, and on-resistance of 2.1 Ω-mm, were much better than those of the planar-structured MOSHEMTs. Moreover, the threshold voltage of the multi-mesa-channel-structured MOSHEMTs shifted toward positive voltage from −2.6 to −0.6 V, which was attributed to the better gate control capability. Moreover, the multi-mesa-channel-structured MOSHEMTs also had superior high-frequency and low-frequency noise performance. A low Hooge’s coefficient of 1.17 × 10−6 was obtained.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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